摘要:

Silicon homoepitaxial films have been grown by ion beam sputter deposition using an ultrahigh vacuum (UHV) apparatus withinsitudiagnostic equipment. The deposition conditions are characterized and the beginning of single crystal growth occurs at 250 °C. Films of high crystalline and morphological quality are obtained at deposition temperatures above 700 °C, where good doping element transfer efficiency from the target to the film is observed. Room temperature bulk mobility is found for film thicknesses as low as 0.5 μm and deposition temperatures near 700 °C.

ISSN:1071-1023    

DOI:10.1116/1.583475

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

This paper reviews some aspects of and recent advances in plasma assisted deposition of thin films for microelectronic applications. The plasma deposition process and some properties of deposited films relative to integrated circuit fabrication will be briefly discussed. Possible trends in future research and development of plasma deposition for microelectronic applications will also be presented.

ISSN:1071-1023    

DOI:10.1116/1.583476

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

Schottky barrier diodes were fabricated by sputter depositing Ti–W onn‐type Si in a dc magnetron sputtering system at voltages ranging from 460 to 780 V dc. The diode characteristics were determined by current–voltage (I–V) and capacitance–voltage (C–V) methods, while deep level transient spectroscopy (DLTS) served to characterize the sputter induced defects and investigate their dependence on sputtering voltage. Barrier heights of the devices and the concentrations of the sputter induced defects strongly depend on the sputtering voltage. Devices deposited at 660 V dc had the highest barrier height (0.60 eV) and contained the lowest concentration of defects. Several electron traps were measured in the as‐deposited devices. Their concentrations varied by a factor of up to 20 and depended upon the sputtering voltage. Isochronal annealing for 10 min up to a temperature of 400 °C increased the barrier height of all devices, except those deposited at 780 V dc, to a value approximately equal to that of the 660 V dc deposited devices. The isochronal annealing showed that some defects could be removed and that others were again introduced. When annealed at temperatures above 400 °C, defects appeared to be distributed deeper into the substrates than before annealing.

ISSN:1071-1023    

DOI:10.1116/1.583477

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

Thin selective chemical vapor deposited tungsten films are evaluated as a barrier metal for reaction between Al–1%Si electrode and Si substrate. Change in contact resistance and junction leakage current after annealing at 500 °C in N2are measured. It is found that an increase of contact resistance at a very small contact hole of 2.25 μm2is very slight. On the other hand, contact resistance in Al–1%Si electrode increases to one or two magnitudes with annealing of 210 min. Junction leakage current in a tungsten electrode is almost the same as that in Al–1%Si electrode. And it is also found that a thin tungsten layer protects the diffusion of aluminum into the Si substrate. From these results, it is concluded that thin selective chemical vapor deposited tungsten films have a good barrier effect for the reaction between Al–1%Si electrode and Si substrate.

ISSN:1071-1023    

DOI:10.1116/1.583478

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

A completely nonconformal Al step coverage was observed on via structures with almost vertical sidewalls using a nozzle jet expansion deposition technique. For vias of dimensions 0.8 and 1 μ, deposition of Al by this technique resulted in a uniform layer of Al at the bottom of the vias with no sidewall coating. Possible use in several very large scale integrated (VLSI) metallization applications is suggested.

ISSN:1071-1023    

DOI:10.1116/1.583479

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

The growth of silicon films by low pressure chemical vapor deposition in an unique vertical‐flow reactor and in a conventional tube reactor is studied, with emphasis on the vertical‐flow reactor. For a hydrogen‐carried silane process in the vertical‐flow reactor, the growth rate depends on both the partial pressure and the flow rate of silane. A growth rate expression incorporating both of these parameters is derived which accounts for a nearly linear dependence on either parameter for small values and saturation at large values. No dependence on hydrogen partial pressure is observed. An Arrhenius‐type dependence of growth rate on temperature is observed for both type of reactors, with an activation energy of 1.5 eV. Thickness uniformity of the films deposited in the vertical‐flow reactor is compared to that found in the conventional reactor. For high temperatures (above 650 °C) depletion effects degrade the thickness uniformity of the deposited films. Such effects are more pronounced in the conventional reactor than in the vertical‐flow reactor. These effects can be attributed to the shorter gas flow path in the vertical‐flow reactor. The vertical‐flow reactor can be operated without a temperature gradient along the deposition chamber so that uniform film properties can be obtained over the entire load.

ISSN:1071-1023    

DOI:10.1116/1.583480

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

The laser‐induced pyrolytic deposition (LCVD) of high purity gold metal is discussed. The effects of laser flux and cell temperature are examined for the deposition process. Rates of deposition, resistivities, and deposit quality are highlighted.

ISSN:1071-1023    

DOI:10.1116/1.583481

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

Aluminum deposition by radio‐frequency bias sputtering on grooves and holes with aspect ratios (depth to width) in the range of 0.5–1.0 was studied experimentally and by computer simulation. The structures with an aspect ratio of up to 0.5 were planarized. Aspect ratios larger than about 0.6 however led to the buildup of cavities within the grooves and holes. This limitation for narrow structures with vertical sidewalls was observed experimentally and was in excellent agreement with the results of the profile simulations. The critical aspect ratio may be increased by using a higher bias potential and slope angles of less than 90°.

ISSN:1071-1023    

DOI:10.1116/1.583482

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

We have investigated a method for passivation of InSb by vacuum deposition of SiOxon native oxide layers grown by wet anodization. We show that this multilayer dielectric approach results in improved passivation properties. Results of high resolution Auger spectroscopy reveal important information on the layer structure and composition of this passivation film. Specifically, we report the experimental observation of SiO2formation at the SiOxanodic oxide interface. The interfacial reaction is limited to a thin layer, about 10 nm thick. The SiOxoxidation proceeds by reduction of the native oxide and formation of elemental In and Sb. The electrical features observed in theC–Vcurves (such as flat‐band voltage, hysteresis, low‐frequency‐like response in the inversion region, and other deviations from the ideal curves) are explained in view of the oxidation states of In and Sb, observed at the oxide layers and at their interfaces. These correlations were used for characterization of the desired interlayer parameters.

ISSN:1071-1023    

DOI:10.1116/1.583483

出版商:American Vacuum Society    

年代:1986

数据来源: AIP

摘要:

This paper presents a study of the ion‐enhanced etching of InP by Cl2using a modulated ion beam technique, in which pulses of rare gas ions impinge on an InP surface with coincident Cl2and the resultant products are detected with a mass spectrometer. The stoichiometry of these products and the dependence of the ion enhanced etching on InP temperature and chlorine pressure are compared to the thermodynamically predicted chemical etching of InP by Cl2. The dependence of the ion‐enhanced etching on ion current, ion energy, and ion mass are compared to the dependence on these parameters observed in the physical sputtering of InP. The experimental results are discussed in relation to a model in which the incident ion creates a transient thermal pulse (∼100 ° K) which causes the desorption of the relatively volatile indium chlorides from the surface. Of particular technological importance is the fact that large chemical enhancements over physical sputtering (>100/1) are possible with such a mechanism.

ISSN:1071-1023    

DOI:10.1116/1.583484

出版商:American Vacuum Society    

年代:1986

数据来源: AIP