摘要:

A technique for modelling diffusion in semiconductors is described starting from a consideration of the physical processes involved rather than explicitly using differential equations. It is shown that for simple cases the same result is obtained but that for the more complex mechanisms which often arise in III-V semiconductors, a physical approach can provide a simpler way of approaching the problem. Examples are taken from the literature.

DOI:10.1049/jiere.1987.0003

出版商:IERE    

年代:1987

数据来源: IET

摘要:

The current status of self-alignment in GaAs is reviewed and the technological impact of the various different techniques assessed. The discussion centres around the gate-priority and ohmic-priority self-aligned n+implantation schemes. The advantages and disadvantages of each approach are discussed in terms of both process complexity and ultimate performance. The short channel effect, orientation effect and planar channelling are described as potential problem areas for short gate length self-aligned devices and the ability of each process to alleviate these effects is considered.

DOI:10.1049/jiere.1987.0002

出版商:IERE    

年代:1987

数据来源: IET