摘要:

Electron spin resonance and optical absorption studies of defects in the inorganic azides are reviewed. The various proposed models for the different data are discussed and the detailed electronic structure of the defect is considered. Comparisons of the properties of the same defect in different azide lattices are made. Remaining problems with proposed models are pointed out. Thermoluminescence and infra-red studies of irradiated azides are briefly considered.

ISSN:0033-7579    

DOI:10.1080/10420157408230806

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Damage track registration in organic insulators is affected by morphological and chemical changes of the polymers. On the other hand it is possible to produce various typical morphological and chemical deteriorations in organic polymers by simple heat treatments, according to the thermal stability of these materials.

ISSN:0033-7579    

DOI:10.1080/10420157408230807

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Bombardment-induced damage in single crystals of tungsten and niobium, implanted with 300-keV Ar+at 25°K, has been examined by means of the channeling-effect technique. Target temperature was maintained at 25°K throughout the implantation and subsequent analysis in order to minimize annealing effects. Very high implantation doses (compared with doses involved in semiconductor work) had to be used before significant damage was observed. This would indicate that a strong spontaneous recovery occurs in these metals even at 25°K. The damage was seen mainly as an enhanced dechanneling component. In niobium a slight indication of a damage peak was also observed. Preliminary annealing studies did not show any significant annealing stages between 25°K and 300°K in the case of tungsten, while some annealing between 25°K and 300°K was observed in niobium.

ISSN:0033-7579    

DOI:10.1080/10420157408230808

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Sputtering yields are determined from interference micrographs of the etched pits developing during ablation of discharged silica surfaces by a homogeneous Ar ion beam at normal incidence. The maximum of the sputtering yield was found to be 1.8 atoms per incident ion at about 20 keV.

ISSN:0033-7579    

DOI:10.1080/10420157408230809

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

20% cold worked Type 316 stainless steel in the form of uniaxially stressed solid rod and pressurized tubes was irradiated at 450°C in the EBR-11. Five irradiated and three unirradiated specimens were examined by transmission electron microscopy to determine the effect of stress on microstructure and possible mechanisms related to creep occurring during fast reactor irradiation.

ISSN:0033-7579    

DOI:10.1080/10420157408230810

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Single crystal vanadium has been im lanted with Ga, Bi, In, Cs, Se and Kr ions in the energy range between 40 and 300 keV and doses in the range 1014B-1017ions/cm2. Implanted samples were analysed using the backscattering and channelling technique. The depth of damage was found to be considerably greater than the projected range of the implanted ions, and dependent on ion energy and dose. Only a small dependence of the amount of damage on these parameters was detected. A low damage density was observed in the range of the implanted ions for doses up to 1016ions/cm2whereas for higher doses and for Ga implants after heat treatment the formation of a polycrystalline layer in this region occurred. A break-up of this layer at temperatures of about 1000°C was accompanied by a loss of the implanted constituent. At low doses (< 1016ions/cm2) and for all ions a broad annealing stage for the radiation damage was observed between 500 and 900°C. A strong dependence of the substitutional component on the atomic radii of the implanted ion was also detected. An enhanced substitutional solubility of Ga in vanadium was achieved with the implantation technique.

ISSN:0033-7579    

DOI:10.1080/10420157408230811

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Glass plates have been developed as high exposure dosimeters. They can be utilized in measuring absorbed dose in the range about 109and 1010rads. The principle of operation is based on the relationship between the absorbed dose and the increased loss of mass from the glass surface when it is etched in a 6% HI: solution from 5 to 50 minutes. The advantages of the technique are the low price of the dosimeter, reproducibility and possibility of working with a dose that saturates other dosimeters.

ISSN:0033-7579    

DOI:10.1080/10420157408230812

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Irradiations of polycrystalline specimens of cobalt at various electron energies and at low temperature were performed. It was found impossible to explain the obtained data by using a simple step function for the probability of displacementP(T) as a function of the kinetic energyTimparted to a struck atom. More involved functions have to be considered. For irradiation temperatures lower than 6 K, the onset threshold is found to be:Td=22 ± 1 eV and the experimental results are best fitted by a theoretical cross-section curve calculated with:P(T)=O ifT<22.5 eV=0.50 if 22.5 <T< 31 eV=0.78 if 31 eV <T

ISSN:0033-7579    

DOI:10.1080/10420157408230813

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor