摘要:

A device is described that employs second harmonic generation to analyze the output from low‐power lasers. It consists of a calcite beam splitter and a KDP second‐harmonic generator. Its high sensitivity and resolution are demonstrated by investigating the output from several free‐running cw GaAs lasers.

ISSN:0003-6951    

DOI:10.1063/1.1652646

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Thermally grown silicon dioxide layers were irradiated with kilovolt electrons, and the equilibrium surface potential was measured by passing the secondary electrons through an energy analyser. The incident electrons at 5‐keV energy penetrate for 3300 Å into a 5700‐Å oxide film. The observed equilibrium surface potential is initially less than 1 V which indicates efficient induced conductivity; but after 10 C/cm2it is −30 V (which indicates that the conductivity has diminished); and finally at 20 C/cm2it is less than 1 V again. Annealing reverses the process. A model is proposed.

ISSN:0003-6951    

DOI:10.1063/1.1652653

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The temperature dependence of lattice disorder created in Si by 40‐keV Sb ions was studied by energy analysis of the yield of backscattered 1‐MeV He ions incident along ⟨111⟩ and ⟨110⟩ axes. Doses of ∼ 1 × 1013Sb ions/cm2were used so that the disorder level was below that representing an amorphous layer. The disorder per incident ion decreases strongly with implant temperature above 50°C. This is approximately 100°C lower than the region of corresponding decrease in the anneal of a low‐dose room‐temperature implantation. For implantation temperatures less than 50°C, the disorder per ion was only mildly temperature‐dependent.

ISSN:0003-6951    

DOI:10.1063/1.1652655

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The experimental success in the generation of coherent ultrasonic waves from a GaAs Gunn oscillator with a dc pulse is reported. The frequency of the ultrasound is independent of the mechanical eigenfrequency of the oscillator.

ISSN:0003-6951    

DOI:10.1063/1.1652656

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

An analysis of the forward current‐voltage data for a temperature range of 77.2° to 423°K on a Cr&sngbnd;Si (ND= 7 × 1018cm−3) Schottky barrier diode is given. TheI‐Vbehavior of such a diode, which obviously does not follow the simple Schottky theory, is not explained by the more recent calculations of Padovani and Stratton, and of Crowell and Rideout in which field emission is taken into account. It is observed that the peak in differential resistance and its variation with voltage on such a diode is in reasonable agreement with the theories of Stratton and Padovani, and of Crowell and Rideout.

ISSN:0003-6951    

DOI:10.1063/1.1652637

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Pulses of 500‐psec duration, emitted by a mode‐locked He&sngbnd;Ne laser, have been electro‐optically frequency swept and then compressed to 270 psec by multiple reflections from an interferometer proposed by Gires and Tournois.

ISSN:0003-6951    

DOI:10.1063/1.1652638

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

A scanning electron microscope was used to observe the bulk electrovoltaic effect in GaAs devices. Displays showing the distribution of inhomogeneities of carrier concentration over an area of a sample of bulk or epitaxial GaAs were produced. A correlation was found between the device performance and the inhomogeneity distribution observed in the material.

ISSN:0003-6951    

DOI:10.1063/1.1652639

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Current‐voltage measurements made withp‐type tellurium at 77°K are reported. Voltage pulses sufficiently short to avoid the formation of electroacoustic domains were applied to the sample. The small deviations from Ohm's law at low current densities are interpreted by polar optical mode scattering and scattering by lattice defects. At a field strength of 3 kV/cm there is a region of negative differential resistivity in the transition to current densities an order of magnitude larger. A change in effective mass by intervalley transition of hot holes is discussed.

ISSN:0003-6951    

DOI:10.1063/1.1652640

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The tunneling behavior of Schottky barriers has been investigated by several authors. TheI‐Vcharacteristics exhibit an exponential form in the forward direction which can be used to determine the energy vs complex momentum dispersion relation for charge carriers in the forbidden gap. In this paper we show that under proper conditions the presence of traps can increase the tunneling probability and result in a reduction in the slope of the logIvsVcharacteristic by a factor of 2.

ISSN:0003-6951    

DOI:10.1063/1.1652641

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

It is demonstrated that the usefulness of time‐average holography in analyzing vibration can be extended by modulating the reference beam.

ISSN:0003-6951    

DOI:10.1063/1.1652642

出版商:AIP    

年代:1969

数据来源: AIP