1. |
12× pulse compression using optical fibers |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 1-2
B. Nikolaus,
D. Grischkowsky,
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摘要:
We report a factor of 12 compression of the 5.4‐ps, 1‐kW pulses from a mode‐locked dye laser. The pulses were frequency broadened and linearly chirped by the combined action of self‐phase modulation and group velocity dispersion during passage through a 30‐m single‐mode optical fiber. The fiber output pulses were then compressed to 450‐fs, 3‐kW pulses by passage through a diffraction grating based dispersive delay line. These short pulses were tunable over the 300‐A˚ range of the laser dye.
ISSN:0003-6951
DOI:10.1063/1.93749
出版商:AIP
年代:1983
数据来源: AIP
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2. |
Rate and efficiency of I2dissociation in the presence of O2(1&Dgr;) |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 3-5
G. N. Hays,
G. A. Fisk,
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摘要:
We adopt a simplified kinetic scheme to account for the functional dependence of the observed, rapid dissociation of I2in the presence of O2(1&Dgr;). Phenomenologically, the functional form for I2disappearance was found to bed[I2]/dt=−[(6±4)×10−29cm6 s−1][I2][O2(1&Dgr;)]2for O2(1&Dgr;) concentrations greater than 25 mTorr. Moreover, analysis of our data indicates that three O2(1&Dgr;) molecules are expended in producing two iodine atoms.
ISSN:0003-6951
DOI:10.1063/1.93758
出版商:AIP
年代:1983
数据来源: AIP
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3. |
Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 6-8
K. J. Ebeling,
L. A. Coldren,
B. I. Miller,
J. A. Rentschler,
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摘要:
Monolithic two‐section GaInAsP/InP lasers are shown to operate in a single longitudinal mode under high‐speed pulsed current modulation. The length of the emitted monomode light pulses is less than 500 ps. The suppression of secondary modes is described in a rate equation model that is generally useful for a variety of coupled‐cavity configurations. It is found that 10% increase in cavity loss for the unwanted modes is sufficient to provide 17 dB suppression.
ISSN:0003-6951
DOI:10.1063/1.93729
出版商:AIP
年代:1983
数据来源: AIP
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4. |
Soft x‐ray pumping of metastable levels of Li+ |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 9-11
R. G. Caro,
J. C. Wang,
R. W. Falcone,
J. F. Young,
S. E. Harris,
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摘要:
Soft x rays from a plasma generated by a neodymium: yttrium aluminum garnet laser beam (1.06 &mgr;m) are used to photoionize neutral Li vapor to produce Li+metastables. Maximum metastable densities of Li+(1s2s)1S=6×1014ions/cm3and Li+(1s2s)3S=3×1015ions/cm3are obtained. The effective lifetimes of these levels are measured to be approximately 5 ns. At 50 mJ of incident laser energy the inferred conversion efficiency from 1.06‐&mgr;m radiation to soft x rays is ∼14%.
ISSN:0003-6951
DOI:10.1063/1.93742
出版商:AIP
年代:1983
数据来源: AIP
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5. |
Polarization coupling effects in transversely excited atmospheric CO2lasers: Application to single axial mode operation |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 12-14
A. K. Kar,
R. G. Harrison,
D. M. Tratt,
C. A. Emshary,
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摘要:
We report the observation of anomalous polarization coupling effects occurring in injection‐locked transversely excited atmospheric (TEA) CO2lasers, deduced from studies of the injection detuning parameter under varying conditions of polarization and injection power. For the special case of injection with orthogonally polarized radiation we have determined the existence of an optimum operation point, exhibiting minimum sensitivity of single mode operation to the detuning parameter. Off‐resonance injection locking of untuned TEA cavities is also discussed.
ISSN:0003-6951
DOI:10.1063/1.93746
出版商:AIP
年代:1983
数据来源: AIP
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6. |
Influence of lateral waveguiding properties on the longitudinal mode spectrum for semiconductor lasers |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 15-16
Bernhard Stegmu¨ller,
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摘要:
The direct dependence of the longitudinal mode spectrum on active and passive waveguiding and stripewidth of metal‐cladded ridge‐waveguide‐stripe lasers is presented. Since the investigated lasers originate from the same epitaxial wafer, the influence of other laser parameters, such as layer characteristics and material quality, can be neglected. Experimental results agree well with a theory, based on the spontaneous emission coefficient as the dominant parameter, which is affected by the curvature of wave fronts.
ISSN:0003-6951
DOI:10.1063/1.93747
出版商:AIP
年代:1983
数据来源: AIP
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7. |
Structure‐dependent threshold current density in InGaAsP quantum well lasers |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 17-19
Akira Sugimura,
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摘要:
Threshold current density is studied theoretically for InGaAsP multiple quantum well lasers by including the Auger recombination process. All the possible transitions between quantized subbands of two‐dimensional carriers are taken into account in evaluating radiative and Auger processes. The Auger recombination current depends strongly on the quantum well structure, resulting in the necessity for an elaborate structure design. A design procedure is elucidated for the structure which gives the lowest threshold current density for InGaAsP multiple quantum well lasers.
ISSN:0003-6951
DOI:10.1063/1.93748
出版商:AIP
年代:1983
数据来源: AIP
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8. |
Discharge pumped ZnI (599–606 nm) and CdI (653–662 nm) amplifiers |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 20-22
D. P. Greene,
J. G. Eden,
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摘要:
Peak small‐signal gain coefficients (&ggr;0) of 2.0% cm−1and 0.7% cm−1have been obtained on theB→Xbands of CdI (cadmium monoiodide) and ZnI, respectively, in a UV‐preionized, high‐temperature (650≲T≲710 K) transverse discharge. For CdI, &ggr;0is greater than 1% cm−1over a 90‐A˚ (653≤&lgr;≤662 nm) spectral region.
ISSN:0003-6951
DOI:10.1063/1.93750
出版商:AIP
年代:1983
数据来源: AIP
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9. |
Improved lifetimes of (GaAl)As visible (740 nm) lasers by reducing bonding stress |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 23-24
T. Hayakawa,
N. Miyauchi,
S. Yamamoto,
H. Hayashi,
S. Yano,
T. Hijikata,
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摘要:
It is shown that the active layer stress caused by the bonding process can be reduced by setting the thicknesses of the cap layer and the substrate at the appropriate values. The life test of the (GaAl)AsV‐channeled substrate inner stripe lasers emitting at 740 nm, 50 °C demonstrated that the lifetime is considerably improved by the introduction of the thick cap layer (∼40 &mgr;m) and the thinned substrate (∼80 &mgr;m).
ISSN:0003-6951
DOI:10.1063/1.93751
出版商:AIP
年代:1983
数据来源: AIP
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10. |
Direct gain modulation of a semiconductor laser by a GaAs picosecond optoelectronic switch |
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Applied Physics Letters,
Volume 42,
Issue 1,
1983,
Page 25-27
E. O. Go¨bel,
G. Veith,
J. Kuhl,
H.‐U. Habermeier,
K. Lu¨bke,
A. Perger,
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摘要:
We report a novel application of high‐speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Cr‐doped GaAs photoconducting switch activated by a synchronously mode‐locked cw dye laser. Infrared light pulses of 55‐ps width are emitted from the semiconductor laser.
ISSN:0003-6951
DOI:10.1063/1.93752
出版商:AIP
年代:1983
数据来源: AIP
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