摘要:

The average thermal velocity of atoms in an atomic‐beam apparatus is measured using the velocity‐dependent interaction&mgr;→·[(v→/c)×E→].

ISSN:0003-6951    

DOI:10.1063/1.1653011

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Dye laser action has been achieved with a pulsed N2laser as the pumping source. The dye laser pulses vary in length from 2 to 10 nsec for the various dyes used and have been tuned to cover the entire visible spectrum with the proper choice of dyes and cavity optics. The system is capable, for some dyes, of repetition rates as high as 100 pulses/sec with reasonably good efficiencies.

ISSN:0003-6951    

DOI:10.1063/1.1653019

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Recent experiments using high current capacitor discharges have produced high power laser action in multiply ionized xenon. Strongest oscillation was found on five simultaneous transitions in the green. These lines had a total peak power of 1.4 kW. In addition, streak camera pictures have shown that the onset of laser action begins and is sustained during the interval of time when the plasma is being compressed (``pinched'') by its self‐electromagnetic forces.

ISSN:0003-6951    

DOI:10.1063/1.1653028

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Observation of self‐pulsing in a helium‐cadmium laser is reported in which two running pulses are present inside the cavity. The beat frequency between the two pulses is more stable as the number of modes is decreased, and is very regular at about 8 kHz when only two modes are present within each of the two main spectral peaks of the natural‐cadmium active medium.

ISSN:0003-6951    

DOI:10.1063/1.1653030

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Observation of self‐mode‐locked pulses with a rotating‐mirrorQ‐switched CO2laser is reported. Pulses as short as 10 nsec, narrower than the normal CO2linewidth limit, were obtained. The shortness of these pulses is attributed to saturation broadening of the pulse spectrum.

ISSN:0003-6951    

DOI:10.1063/1.1653012

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Sheet‐resistivity and Hall‐effect measurements on ion‐implanted silicon wafers have been performed. Carrier concentration profiles over the range of about 1019–1011carriers/cm3have been obtained for implants of 1014ions/cm2of11B,27Al, and31P. Three regions, due to different penetration mechanisms, can be clearly distinguished: the amorphous range, the channeling range, and the supertail. Some indication for a kinetic substitution mechanism is seen in the channeling region.

ISSN:0003-6951    

DOI:10.1063/1.1653013

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Using grazing‐angle high‐energy electron diffraction (HEED) epitaxial crystallites of &bgr;‐Sic have been observed on Si surfaces simultaneously with the silicon fractional‐order surface structures. SiC has not been observed with the LEED technique under comparable experimental conditions. The surfaces containing SiC were prepared by iodine desorption. Surfaces prepared by oxide decomposition at 1200 °C or byin situpyrolysis of SiH4were carbide free. The experiments showed the carbide was due to decomposition of a carbon adsorbate.

ISSN:0003-6951    

DOI:10.1063/1.1653014

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

A method is reported for coupling laser beams into thin structures (∼1 &mgr;m) and for easy coupling of optical signals between various thin structures. CdSe platelet lasers, pumped with Ga(AsP) laser diodes (77 °K), are coupled to CdS and Cd(SeS) platelet waveguides.

ISSN:0003-6951    

DOI:10.1063/1.1653015

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Peaks in the differential energy distribution resulting from losses of the type (Ep−E1), whereEpis the primary energy andE1is the critical ionization potential of an inner atomic shell giving rise to a strong Auger transition, have been observed during Auger emission spectroscopy. In the example presented, characteristic loss peaks due to ionization of the boron and carbonKshells are shown. Loss peaks are usually of the same order of magnitude as some of the smaller Auger peaks, and care should be taken in identification, under certain conditions of analysis, that the two are not confused.

ISSN:0003-6951    

DOI:10.1063/1.1653016

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

A new technique for the direct measurement of the Gru¨neisen parameter of elastic materials is presented. The technique employs the measurement of the one‐dimensional thermoelastic response of materials exposed to a pulsed electron beam. The measured values of the Gru¨neisen parameter for single crystals of both metals and semiconductors are in excellent agreement with thermal values.

ISSN:0003-6951    

DOI:10.1063/1.1653017

出版商:AIP    

年代:1970

数据来源: AIP