摘要:

Suppression of oxidation‐stacking‐fault (OSF) generation is studied by x‐ray section topography, etching technique, and transmission electron microscopy (TEM). Microdefects (MD’s) are generated in bulk Si during N2atmosphere annealing at about 1000–1100 °C, and their generation is confined to the inner part of the Si wafer. These MD’s grow rapidly during subsequent oxidation. The grown MD’s contribute to stacking faults (SF’s) in the inner part of bulk Si. On the contrary, surface OSF’s are not introduced by the subsequent oxidation because no MD’s are generated in the surface layer by the preannealing. The suppression effect of OSF generation by N2atmosphere preannealing is demonstrated using several samples.

ISSN:0003-6951    

DOI:10.1063/1.89831

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The feasibility of fabricating wedges suitable for wave propagation by cleaving LiNbO3is demonstrated. This is a simple technique that affords excellent control over the wedge angle. The velocity and field distribution of line waves along the cleaved edge are predicted well from theory.

ISSN:0003-6951    

DOI:10.1063/1.89826

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Stress fields in silicon substrates, induced by edges of silicon nitride films, were studied by experimentally observing the distribution of indentation‐injected dislocation half‐loops in the vicinity of the film edge. From this distribution, the stress field was obtained by applying the method of analysis recently introduced by the author. The results were compared to the theoretical stress field due to a line force (an approximation) tangential to the boundary of a half‐space, with good agreement.

ISSN:0003-6951    

DOI:10.1063/1.89840

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A new two−dimensional time‐dependent electromagnetic particle code is applied to the high‐voltage pulsed power flow problem in a long self‐magnetically insulated coaxial line. It is found that the current leakage occurs only near the front of the voltage pulse, that energy transport is very efficient at high voltages, and that the electrons in the insulated region do not get close to the anode.

ISSN:0003-6951    

DOI:10.1063/1.89816

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Gain‐switched CO2laser pulses of 225 J were focused onto planar carbon targets in the presence of longitudinal magnetic fields up to 105 kG. For fields above 25 kG, the mass loss and cross‐sectional area of the cylindrical blow‐off plasma varied asB−6/5. For these cases, only the 60‐nsec gain‐switched laser spike caused target damage; the 1.5‐&mgr;sec tail was absorbed by a ∼100‐eV partially confined plasma extending several cm from the target. The field dependence of the plasma cross section is consistent with an adiabatic expansion against the magnetic field.

ISSN:0003-6951    

DOI:10.1063/1.89827

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The epitaxial regrowth of amorphous silicon layers created by a high‐dose antimony implantation in silicon was found to be influenced by the presence of antimony atoms. At concentrations of less than 1020/cm3the regrowth rate was enhanced in comparison with undoped amorphous silicon layers. For higher antimony concentrations, however, this regrowth was retarded, while for concentrations of about 5×1021/cm3it was completely inhibited. The concentration limit above which the influence on the regrowth rate is negative appears to be an order of magnitude larger than the maximum solid solubility of the impurity atoms.

ISSN:0003-6951    

DOI:10.1063/1.89828

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Depth profiles of Se‐implanted GaAs samples have been measured using secondary ion mass spectrometry (SIMS). Analyses performed on liquid‐nitrogen and room‐temperature implants into Cr‐doped substrates indicate that Se diffusion during subsequent heat treatment is negligible when the samples are annealed at 1000 °C for 15 min. A 12‐h anneal at 1000 °C does, however, produce a diffused profile but with a diffusion constant of 2.8×10−15cm2/sec as compared with the value 1×10−13cm2/sec for thermal diffusion of Se at this temperature.

ISSN:0003-6951    

DOI:10.1063/1.89829

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The degree of interchain packing in solid polyethylene (PE) amorphized by &ggr; irradiation has been analyzed by the x‐ray diffraction method. The differential radial distribution function (DRDF) of amorphous PE has revealed that the short‐range order in interchain packing exists as wide as 20 A˚, which depends, however, slightly on the dose of irradiation. Parseval’s relation has proved the adequacy of the DRDF obtained.

ISSN:0003-6951    

DOI:10.1063/1.89830

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The pressure dependence of resisitivity ofn‐type AgInSe2has been investigated up to 40 kbar hydrostatic pressure. The resisitivity shows a slight increase with pressure up to 26 kbar but exhibits a phenomenal time‐dependent rise in the region between 28 and 32 kbar. The sample resisitivity rises by a factor of 2×106before saturating. We believe that this effect is due to the formation of compensating defect centers in the crystal, prior to the sluggish transformation from the chalcopyrite to the NaCl‐type structure.

ISSN:0003-6951    

DOI:10.1063/1.89832

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Channeling effect measurements have been employed to investigate radiation damage produced by 100‐keV Ar ions in preferred oriented polycrystalline metal‐silicide layers, such as Pd2Si and NiSi2layers formed on single‐crystalline Si. For room‐temperature implantation, an amount of the damage in Pd2Si layers was found to saturate at doses between 3×1014and 1×1017ions/cm2, where the minimum aligned yield of 1.5‐MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi2layers became amorphous at doses higher than 3×1015ions/cm2. These results were confirmed by the reflection electron diffraction analyses.

ISSN:0003-6951    

DOI:10.1063/1.89818

出版商:AIP    

年代:1978

数据来源: AIP