摘要:

An experimental technique is described for determining the electrical properties of thin semiconducting films as a function of distance from the surface. The method is applied to silicon on sapphire films nominally 1 &mgr; thick and doped ``n'' type on the order of (2–6)×1016/cm3, and the variation in average mobility and carrier concentration with depth into the layer is determined.

ISSN:0003-6951    

DOI:10.1063/1.1653956

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Plasma is created from solid deuterium targets by neodymium laser irradiation. The reflected laser light is shifted by 2.5 Å towards longer wavelengths. This is interpreted as a Doppler shift of the laser light reflected at a layer moving in the direction of the incident radiation with a velocity of 3.5×106cm sec−1.

ISSN:0003-6951    

DOI:10.1063/1.1653966

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The observation of thermally stimulated emission of low‐energy electrons (TSEE) from LiF single crystals that had been subjected to intense pulses of light from a Nd‐glass laser is reported. TSEE images of the surface are obtained with the aid of an array of Channeltron electron multipliers. Correlations between image features and laser surface damage have been discovered that suggest the utilization of the TSEE image technique for nondestructive testing of optical surfaces with respect to their laser surface‐damage threshold.

ISSN:0003-6951    

DOI:10.1063/1.1653972

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The peak voltage of the response in a pyroelectric sample to ir signals much shorter than the thermal and electronic time constants of the sample is shown to be proportional to the energy absorbed per signal, and independent of load resistance and signal repetition frequency, as long as temperature is far enough from the Curie point. These results were checked experimentally in triglycine sulphate and strontium‐barium niobate.

ISSN:0003-6951    

DOI:10.1063/1.1653978

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Electrostatic instabilities associated with the bounce frequency are studied for a mirror‐confined plasma. A plasma with a monochromatic energy distribution perpendicular to the magnetic field is shown to introduce a new mode at &ohgr;∼n&ohgr;bwhich is unstable when&ohgr;p/&ohgr;b≳ 0(1), where &ohgr;band &ohgr;pare the bounce and plasma frequencies, respectively.

ISSN:0003-6951    

DOI:10.1063/1.1653979

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Transient phenomena of write‐in and erasing processes of the light‐induced memory in Te81Ge15Sb2S2films were observed by the transmission mode using a He&sngbnd;Cd laser. Crystallization was completed in 50 &mgr;sec under illumination, which supports the photon‐enhanced crystallization.

ISSN:0003-6951    

DOI:10.1063/1.1653980

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The laser operation (cw, 77°K) of In1−xGaxP on the nitrogenA‐line transition in indirect crystals (x≥0.74) and in direct crystals above the fundamental band edge (x≤0.71) is reported (5450 and 5470 Å, respectively). Thin (1–5 &mgr;) experimental samples are prepared from crystals grown from In solution by a modified Bridgman method. The crystals are doped with GaN or N from the quartz of the synthesis ampoule. The samples are mounted in a sandwich configuration with indium wetted onto a copper heat sink on one side and thin CdS (10–20 &mgr;) and sapphire on the other side. The thin samples are volume excited in a tiny spot by an argon‐ion laser focused through the sapphire window and the CdS spacer which, with the sample, forms a high‐Qcompound cavity.

ISSN:0003-6951    

DOI:10.1063/1.1653957

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A new phenomenon is reported whereby illumination (in the visible spectrum) is converted into mechanical strain (elastic deformation or mechanical vibrations) in CdS wafers with an orientation perpendicular to the crystallographic axis [001]. It is believed that the light modulates the electric field at the surface (surface barrier) and causes an elastic strain due to the converse piezoelectric effect.

ISSN:0003-6951    

DOI:10.1063/1.1653958

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Calculations of the dispersion of phonons and polaritons in a superlattice show that the frequencies of the phonon and polariton modes may be prescribed by proper design. These modes may be useful as Raman source and Reststrahlen filters.

ISSN:0003-6951    

DOI:10.1063/1.1653959

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Absorption and photoconductivity in GaAs and InP have been studied as functions of light intensityIup to 20 MW/cm2at 1.06 &mgr;. The two‐photon‐absorption coefficient is determined to be ≈ 0.3Icm−1forn‐GaAs and ≈ 0.2Icm−1forn‐InP. These values are much larger than that predicted by the existing theories. For then‐InP samples, the absorption by the two‐photon‐excited free carriers is found to be important, giving an absorption coefficient of ≈ 0.15I2cm−1. From the photoconductivity measurements, the concentration and the absorption cross section of holes are determined.

ISSN:0003-6951    

DOI:10.1063/1.1653960

出版商:AIP    

年代:1972

数据来源: AIP