1. |
Surface enrichment of In in evaporated Au&sngbnd;In films |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 1-3
Simon Thomas,
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摘要:
The surface composition of evaporated Au(98%)&sngbnd;In(2%) alloy films has been investigated by Auger electron spectroscopy. Sputter etching showed the surface concentration to be markedly different from the bulk concentration. The In concentration on a freshly sputter‐etched surface increases with time and reaches an equilibrium value of [inverted lazy s] 15 at.%, at room temperature. This In‐enriched surface is believed to have the thermodynamically stable composition.
ISSN:0003-6951
DOI:10.1063/1.1654987
出版商:AIP
年代:1974
数据来源: AIP
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2. |
Interpretation of channeling effect measurements of disorder in ion‐implanted silicon |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 3-5
F. H. Eisen,
J. Bo&slash;ttiger,
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摘要:
A new method of applying channeling to determine the number of displaced atoms in an ion‐implanted silicon sample is described. The technique utilizes measurements of the transmission energy spectra of channeled protons scattered 10° from the incident beam direction as they penetrate through thin ([inverted lazy s] 1 &mgr;m) silicon crystals to discriminate between ``true'' interstitial atoms and atoms only slightly off lattice sites due to strain. A comparison of this technique with the standard channeling effect technique, using backscattering, indicates that the channeling‐backscattering technique is sensitive mainly to such ``true'' interstitial atoms.
ISSN:0003-6951
DOI:10.1063/1.1654996
出版商:AIP
年代:1974
数据来源: AIP
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3. |
Explanation of laser‐damage cone‐shaped surface pits |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 5-7
C. J. Duthler,
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摘要:
An anisotropic quasistatic stress distribution is found in the material surrounding an absorbing inclusion of a radiusacentered a distancedbelow the surface of a transparent host. Maximum tensile stress greater than the pressure at the inclusion‐host interface occurs at the angle &THgr;m= cos−1(a/d) from the line joining the inclusion center to the surface, resulting in cone‐shaped fracture.
ISSN:0003-6951
DOI:10.1063/1.1655003
出版商:AIP
年代:1974
数据来源: AIP
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4. |
Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 &mgr;m |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 8-10
G. E. Stillman,
C. M. Wolfe,
A. G. Foyt,
W. T. Lindley,
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摘要:
Uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 &mgr;m have been fabricated in InxGa1−xAs alloys. The material used for these devices was grown epitaxially on GaAs substrates using an AsCl3&sngbnd;H2&sngbnd;Ga&sngbnd;In vapor‐phase system which permitted grading the epitaxial layers from GsAs to the desired composition.
ISSN:0003-6951
DOI:10.1063/1.1655004
出版商:AIP
年代:1974
数据来源: AIP
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5. |
Laser emission at 1.065 &mgr;m from neodymium‐doped anhydrous cerium trichloride at room temperature |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 10-13
S. Singh,
L. G. Van Uitert,
J. R. Potopowicz,
W. H. Grodkiewicz,
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摘要:
Room‐temperature laser action is reported in Nd3+: CeCl3. The observed threshold was 0.06 J compared to 0.13 J for Nd3+: YAG. Stronger pump bands and higher laser transition cross sections of neodymium‐doped anhydrous trichlorides of cerium and lanthanum render these materials superior to Nd3+: YAG for miniaturized and thin‐film laser applications.
ISSN:0003-6951
DOI:10.1063/1.1654988
出版商:AIP
年代:1974
数据来源: AIP
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6. |
Optically stimulated x‐ray laser |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 13-15
Isaac Freund,
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摘要:
X‐ray emission from the 2s→ 1stransition in hydrogenic ions stimulated by an optical laser is proposed as a means of achieving lasing action in the x‐ray region. A net gain of 0.27 cm−1is calculated for the 18.97‐Å 2s→ 1stransition of O+7at an inverted population density of 1015ions/cm3in the presence of a Nd laser field of 5 × 108W/cm2.
ISSN:0003-6951
DOI:10.1063/1.1654989
出版商:AIP
年代:1974
数据来源: AIP
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7. |
Possible population inversions for VUV and soft x‐ray transitions in hydrogenlike ions |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 15-17
Willy L. Bohn,
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摘要:
Population inversions for optical transitions in the VUV and soft x‐ray spectral region are predicted theoretically for decaying plasmas. The calculations are based upon a quasisteady‐state theory for hydrogenlike ions. In contrast to other approaches it is shown that the characteristic relaxation time to generate inversions is not that of the corresponding upper levels but that of the ground state of the ions, i.e., the relaxation time for recombination. A plasmadynamic laser system for cw operation in the VUV is proposed.
ISSN:0003-6951
DOI:10.1063/1.1654990
出版商:AIP
年代:1974
数据来源: AIP
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8. |
Degradation mechanism of (Al · Ga)As double‐heterostructure laser diodes |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 18-19
H. Yonezu,
I. Sakuma,
T. Kamejima,
M. Ueno,
K. Nishida,
Y. Nannichi,
I. Hayashi,
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摘要:
This paper reports new observations in degraded (Al · Ga)As double‐heterostructure (DH) laser diodes and proposes a mechanism of short‐term ([inverted lazy s] 100 h) degradation characteristic to DH structures. Degradation is seen localized as ``dark lines'' of certain crystalline orientations in electroluminescent patterns, as well as junction current patterns using an SEM. X‐ray measurement showed internal strain due to heteromismatch. It is suggested that the internal stress accelerates development of the dark lines, which is likely to be a crystalline defect caused by thermal stresses.
ISSN:0003-6951
DOI:10.1063/1.1654991
出版商:AIP
年代:1974
数据来源: AIP
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9. |
Optical intensity modulator with waveguide structure |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 19-21
S. Uehara,
Y. Yamauchi,
T. Izawa,
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摘要:
A low‐driving‐voltage optical modulator with the configuration of an optical waveguide has been fabricated. A LiTaO3single crystal with a thickness of 40 &mgr;m was used as the core and was cladded with a thin film of CeO2formed by evaporation. The extinction ratio was better than 2%.
ISSN:0003-6951
DOI:10.1063/1.1654992
出版商:AIP
年代:1974
数据来源: AIP
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10. |
Frequency‐selective beam coupler for integrated optics |
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Applied Physics Letters,
Volume 24,
Issue 1,
1974,
Page 21-24
R. Ulrich,
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摘要:
A second tunnel layer and an interference layer are added to a prism‐film coupler. The resulting frequency response of the leak rate is given by the Airy formula for an interference filter. Strong coupling exists in the passband, whereas for stopband frequencies the guide and prism are decoupled. Experimentally, a bandwidth of 300 cm−1in the visible is demonstrated. The underlying principle is also applicable to periodic couplers.
ISSN:0003-6951
DOI:10.1063/1.1654993
出版商:AIP
年代:1974
数据来源: AIP
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