摘要:

The electropolishing of Al&sngbnd;Al2O3&sngbnd;Al structures using low‐frequency (50 Hz) alternating current has been experimentally investigated. It is found that, by polishing, the tunnel film thickness could be increased up to 40&percent; without changing the electrical capacitance of the film.

ISSN:0003-6951    

DOI:10.1063/1.1654452

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A new type of glass fiber is discussed. The core of the fiber is pure fused silica, and the cladding is a high‐silica‐content glass. This type of glass fiber has potentially the lowest attenuation of light propagation. A light attenuation of approximately 20 dB/km was measured at a 632.8‐nm wavelength in the preliminary work.

ISSN:0003-6951    

DOI:10.1063/1.1654461

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

We have shown single‐mode surface optical waveguiding in lithium‐ion‐implanted fused quartz, and multimode buried waveguiding in argon‐ and lithium‐ion‐implanted fused quartz. Guide losses are observed to be of the order of 5 dB for the samples investigated for both species of ions. Described in this letter are the experimental procedures and parameters for ion implantation and the measurements for mode behavior as compared to theoretical models.

ISSN:0003-6951    

DOI:10.1063/1.1654470

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A new type of nonlinear delay‐line correlator is described which makes use of a tapped piezoelectric surface‐acoustic‐wave delay line and a series chain of forward‐biased semiconductor diodes. Nonlinear signal mixing in the diode chain is utilized to perform serial product convolution or correlation of arbitrary signal modulation applied at two input ports. Because of the large nonlinearity available with semiconductor diodes, insertion loss for the new correlator is relatively low, approximately 25 dB for the initial experiments reported here. Convolution and correlation experiments are described for an eight‐tap correlator operating with input and mixing frequencies in the 30‐ to 60‐MHz range.

ISSN:0003-6951    

DOI:10.1063/1.1654472

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The electric field and temperature dependence of the quantum gain associated with the internal photoemission of holes from CdS and CdSe into poly(N‐vinyl carbazole), i.e., PVK, are discussed in terms of a simple model of energy‐loss scattering by holes near the PVK surface. Excellent qualitative agreement is obtained between simple analytical expressions derived on the model and data on CdS‐PVK and CdSe‐PVK.

ISSN:0003-6951    

DOI:10.1063/1.1654453

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A series of unstable resonators have been operated in a convective CO2electric‐discharge laser, and the diffraction spreading angle of the output beams has been experimentally determined. Cavities with Fresnel numbers from 5.0 to 35 have been operated, and several of the resonators have produced essentially diffraction‐limited output at power levels up to 1500 W.

ISSN:0003-6951    

DOI:10.1063/1.1654454

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The temperature dependence of electron and Hall mobilities in accumulation and inversion layers is presented for silicon‐on‐sapphire films. The inversion‐layer mobilities, as a function of surface carrier density, are also given. It is suggested that the reduced mobility resulting in these layers is due to silicon‐oxygen complexes located near the film surface. From the data presented, it is expected that deep‐depletionn‐channel transistors will have approximately 40&percent; higher effective mobilities than conventional inversion‐moden‐channel devices on sapphire.

ISSN:0003-6951    

DOI:10.1063/1.1654455

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Thin layers ofn+‐ andp+‐Si have been metallized by implantation of ion doses of 1017Al/cm2at energies of 8 keV. Ohmic characteristics have been obtained after moderate annealing treatments.

ISSN:0003-6951    

DOI:10.1063/1.1654456

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

We observe that, when ZnIn2S4monocrystals at a temperature below 170°K are illuminated by light of the gap energy, the dark resistance, after illumination, is lowered by about nine orders of magnitude. This high‐conductivity state persists until the crystals are either (a) warmed to room temperature, (b) exposed to light of a definite energy less than the gap width, or (c) placed in an electric field. We propose a level 1.76 eV above the valence band, with a repulsive barrier of 0.11 eV, which an electron must penetrate to enter this level and recombine.

ISSN:0003-6951    

DOI:10.1063/1.1654457

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The optical microprobe is used to measure electron diffusion lengths in solution‐grownp‐type layers of Ge‐doped GaAs. They are found to be ∼ 20 &mgr;, which gives an electron lifetime of ∼ 5×10−8sec.

ISSN:0003-6951    

DOI:10.1063/1.1654458

出版商:AIP    

年代:1973

数据来源: AIP