ISSN:0894-3370    

DOI:10.1002/jnm.1660050102

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY

摘要:

AbstractA detailed one‐dimensional energy transport model for unipolar GaAs/AlGaAs heterojunction structures is implemented, by extending the basic transport equations to include the energy balance equation for electrons. A non‐uniform grid‐mesh is used to obtain short simulation times, while the grid‐distance at the N–n++interface is small, which is essential to obtain a low revers

ISSN:0894-3370    

DOI:10.1002/jnm.1660050103

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY

摘要:

AbstractA novel algorithm has been implemented within our new semiconductor device simulation program TESSA that allows large signal periodic time‐domain simulation to be performed by integrating over just one period of the excitation. Conventionally the need to integrate out initial transients, over many cycles, had effectively made such simulations impracticable. The algorithm can also be implemented in the field of circuit simulation so a combined large signal circuit/device simulation package is now a practical possibilit

ISSN:0894-3370    

DOI:10.1002/jnm.1660050104

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY

摘要:

AbstractAn efficient algorithm is presented for the self‐consistent numerical solution of the single‐band effective mass equation. This algorithm has a different form depending on whether the effective mass is modelled as continuous or piecewise continuous. Coupled with a Poisson solver, an established algorithm is applied for the attainment of self‐consistency. The rate of convergence to a self‐consistent solution is investigated, and the solvers are applied to three different structures to demonstrate its versatility and robustness. The first of these is a nominally undoped quantum well AlGaAs/GaAs heterostructure, the second a doubly δ‐doped GaAs homostructure and lastly a quasi‐square well modulation‐doped field effect transistor. The algorithm is of sufficient efficiency so as to allow the software to run reasonably quickly on a modern

ISSN:0894-3370    

DOI:10.1002/jnm.1660050105

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY

摘要:

AbstractA numerical time‐domain modelling of non‐linear microwave circuits is presented. It is based on a numerical procedure allowing the solution of the integro‐differential equation driving the instantaneous electrical behaviour of a lumped‐element circuit while accounting for the semiconductor device by means of an accurate numerical macroscopic model. This modelling is firstly validated by studying the DC turn‐on and DC forward–reverse commutation of a PIN diode. The diode voltage and current waveform are qualitatively consistent with experimental ones, Moreover, the predicted recovery time values are found to be in good agreement with those issued from the classical analytical theory. Secondly, in order to illustrate the present capabilities of the model, the whole transient response of a back‐to‐back silicon PIN diode passive power limiter to a high‐input‐RF‐power pulse is described. It is demonstrated that in the present case of a 2 μm‐long PIN diode, the high‐input‐power steady‐state operation only relies on one diode. To our knowledge, it is the first time this kind of simulation is

ISSN:0894-3370    

DOI:10.1002/jnm.1660050106

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY

摘要:

AbstractThis paper reviews the state of the art in hydrodynamic simulation of hot‐carrier transport in semiconductor devices with application to MOSFET substrate current calculation. Hydrodynamic equations for semiconductors and derived and discretized expressions of these equations for device simulation are presented. Special attention has been given to the discretization of the input power term that appears in the energy conservation equation. A new discretization method for the input power term, based on power generation consideration, is proposed. Energy‐based physical models for mobility and impact ionization are described for use in hydrodynamic simulation. Simulation results for both conventional and lightly‐doped‐drain MOSFETs are pr

ISSN:0894-3370    

DOI:10.1002/jnm.1660050107

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY

ISSN:0894-3370    

DOI:10.1002/jnm.1660050101

出版商:John Wiley&Sons, Ltd    

年代:1992

数据来源: WILEY