ISSN:0920-5071    

DOI:10.1163/156939391X00103

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

Recent results on wave propagation phenomena in planar transmission lines on semiconducting substrates are presented. Special emphasis is laid upon Schottky coplanar lines which are theoretically described by an equivalent circuit. The waveguides are used as optically controlled phase shifters. Under large signal conditions, solitons can be generated and microwave bistability occurs. Finally, we show that Schottky coplanar lines can be applied as high-speed traveling-wave photodetectors, and novel photonic switching devices are proposed.

ISSN:0920-5071    

DOI:10.1163/156939391X00112

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

The most significant computational techniques for the analysis of printed circuit transmission lines fabricated on semiconductor substrates are critically reviewed. Attention is focused on metal-insulator-semiconductor structures for slow-wave applications. Qualitative results on the propagation characteristics of microstrip lines can be drawn using the Transverse Resonance approach to parallel-plate model of the microstrip. Among rigorous full-wave techniques, in addition to the Spectral Domain Method and the Mode-Matching technique, the Modified Mode Matching method is introduced, which combines advantages of both methods. In addition, semi-empirical equivalent circuit models, useful for CAD applications but valid in limited ranges of the relevant parameters, are described, along with strictly numerically oriented approaches such as the Finite Element method for the analysis of complicated geometries.

ISSN:0920-5071    

DOI:10.1163/156939391X00121

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

A mixed finite element formulation for analyzing the propagation characteristics of lossy or dissipative waveguides is presented. Maxwell's equations are expressed in terms of the transverse electric and magnetic field components. This formulation is discretized using this mixed finite element and the classical Lagrange's one. A comparison of these discretizations shows that the use of this mixed finite element eliminates the spurious modes. This method is applied to computing the propagation characteristics of a MIS microstrip line.

ISSN:0920-5071    

DOI:10.1163/156939391X00130

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

Several approaches, using different forms of Green's functions, are presented for the two-dimensional analysis of slow-wave structures which are used in monolithic microwave integrated circuits. It is shown that these methods lead to an accurate determination of the depletion layer profile in the metal-semiconductor structure, allowing an adequate modelling of the corresponding cross-section. The most significant characteristics of a quasi-TEM slow-wave propagation, namely the slowing factor and attenuation constant, are calculated and in some cases the obtained theoretical results are shown to be in good agreement with available experimental data. It is also demonstrated that these methods allow to study single- and dual-gate travelling-wave field effect transistors by means of a simple change in the boundary conditions and that in this case, a "small-signal approach" conducts directly to the evaluation of complex inter-electrode impedances.

ISSN:0920-5071    

DOI:10.1163/156939391X00149

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

Wave propagation along the electrodes of GaAs FET's is treated accounting also for the distributed noise performance. The basic wave properties are discussed and conclusions are drawn regarding both the limits of lumped-element FET-modelling and possible traveling-wave transistor concepts.

ISSN:0920-5071    

DOI:10.1163/156939391X00158

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

This paper provides new insight on traveling wave phenomena, along the transverse direction, in field effect transistors. Specially designed structures are proposed, either in single gate form or in dual gate form, which allow overcoming inherent limitations due to gate losses and realizing on-chip wideband amplifiers. Demonstration of these capabilities is done using testing and modeling procedures based on distributed equivalent circuits.

ISSN:0920-5071    

DOI:10.1163/156939391X00167

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

A method of measuring the properties of micron-sized slow-wave coplanar transmission lines is presented. The transmission line's propagation constant γ and characteristic impedance Zoare determined directly from the measured S-parameters of a section of transmission line. Measurements are made with microwave "on-wafer" probes. Test data from 0.5 to 40 GHz is presented on a relatively low-loss slow-wave coplanar transmission line fabricated on silicon. The measured quality factor of the transmission line is seen to approach 10 at 11 GHz with a wavelength-compression factor of approximately 5.6.

ISSN:0920-5071    

DOI:10.1163/156939391X00176

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

The crosstie overlay slow-wave structure is analyzed by the generalized spectral domain approach. A modified structure with lower conductor loss is presented and analyzed. Experiments that confirm slow-wave propagation in these structures are conducted and the results obtained are compared with calculated data.

ISSN:0920-5071    

DOI:10.1163/156939391X00185

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor

摘要:

The spectral domain-exponential matrix method is developed to evaluate the full-wave dyadic Green's function for generalized anisotropic substrate-superstrate structures. The method of moments is employed to obtain the basic dispersive characteristics of microstrip and inverted microstrip circuit elements on such structures. A collection of results are presented for the propagation constant and characteristic impedance of microstrip elements on generalized anisotropic layers. Emphasis will be placed on the investigation of microstrip properties on a biased ferrite-semiconductor interface. The modeling accounts for arbitrarily-oriented dc bias magnetic fields. The phenomenon of forward and backward wave propagation on this type of nonreciprocal structure will be highlighted.

ISSN:0920-5071    

DOI:10.1163/156939391X00194

出版商:Taylor & Francis Group    

年代:1991

数据来源: Taylor