ISSN:1057-9257    

DOI:10.1002/amo.860010102

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

摘要:

AbstractAmorphous (Al2O3)x(SiO2)ythin films have been grown by atmospheric pressure metal‐organic chemical vapour deposition using the single‐source precursor [Al(OSiEt3)3]2. Characterisation by X‐ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3as the carrier gas resulted in the increased volatility of the precursor by thein situformation of the low‐melting Lewis acid–base adduct Al(OSiEt3)3(NH3); however, no nitrogen incorporation was observed in these deposi

ISSN:1057-9257    

DOI:10.1002/amo.860010103

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

摘要:

AbstractMetal 1 | C16H33–Q3CNQ LB film | metal 2 structures exhibiting asymmetric, non‐linearI/Vcharacteristics have been fabricated using the Langmuir–Blodgett (LB) technique with LB film thicknesses as small as a single monolayer. When such junctions are subjected to low biases, theI/Vtraces exhibit little or no asymmetry, but as the applied biases increase, so theI/V asymmetry becomes more evident. The largest applied voltages before breakdown are of the order of 1 V, which represents an E‐field of order 108V m−1. This breakdown under high biases increases the junction conductance and theI/Vtraces become very noisy. More interestingly, it has been observed that after such breakdown it is possible for the junction to recover on reduction of the bias. It is observed that recovery is not always immediate and may require several voltage sweeps. A subsequent increase in bias will cause breakdown at the same bias as the first breakdown, indicating that no permanent damage has be

ISSN:1057-9257    

DOI:10.1002/amo.860010104

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

摘要:

AbstractBy means of the unique technique of cathodoluminescence wavelength imaging we analyse the distribution and nature of dislocations in strain‐distorted CdS by scanning the spatial pattern of a set of lines due to excitons bound to dislocation‐related defects. The method is demonstrated to be most powerful for the study of dislocations in II–VI and other materials which play a crucial role in hetero‐epistr

ISSN:1057-9257    

DOI:10.1002/amo.860010105

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

摘要:

AbstractReactions of GaX3(X  Br, I) with As(SiMe3)3in 1:1 and 2:1 mole ratios were investigated. For the latter reactant stoichiometry, substances having the empirical formulae AsBr3Ga2(1) and Asl3Ga2(2), the analogues of the previously reported single‐source GaAs precursor (AsCl3Ga2)n, were isolated as yellow isolated as yellow insoluble powders. Low‐temperature reactions in a 1:1 mole ratio resulted in the isolation of the adducts Br3Ga.As(SiMe3)3(3) and I3Ga.As(SiMe3)3(4). On the other hand, at room temperature the GaBr3reaction resulted in a complex mixture from which no characterizable compounds were isolated, whereas the Gal3reaction afforded the crystalline compound [I2GaAs(SiMe3)2]2(5). The structures of 4 and 5 were elucidated by complete single‐crystal X‐ray analysis (crystal data: 4, monoclinic, space groupP21/c,a= 16.497(2) Å,b= 9.629(1) Å,c= 16.658(2) Å, β = 113.21(1)°,V= 2432(1) Å3,Z= 4; 5, orthorhombic, space groupPbca, a= 14.279(2) Å,b= 17.509(2) Å,c= 13.818(2), Å,V

ISSN:1057-9257    

DOI:10.1002/amo.860010106

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

摘要:

AbstractReaction of AgX (X  NO3or CF3SO3) with two equivalents of 4‐alkyloxystilbazole leads to the mesomorphic silver(I) complexes [Ag(n‐OPhVPy)2] [X]in high yield. The long‐chain homologues of each series show SAand SCmesophases, while for shorter chain lengths the nitrate salts show only an SAphase and the triflate salts only a nematic phase. The phase behaviour of these new complexes is discussed in relation to analogous complexes with different counter‐anions o

ISSN:1057-9257    

DOI:10.1002/amo.860010107

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

摘要:

AbstractZnS has been grown on GaAs(100) substrates by atmospheric pressure metal–organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn) and t‐butyl mercaptan (t‐BuSH). The effects of the reactant gas phase molar ratio and the growth temperature on the characteristics of the material grown have been investigated. The structural quality of the layer is demonstrated by X‐ray rocking curve half‐widths of less than 300 arcsec for the epilayers. There is little significant pre‐reaction and the layers are of excellent surface morphology and layer

ISSN:1057-9257    

DOI:10.1002/amo.860010108

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

ISSN:1057-9257    

DOI:10.1002/amo.860010109

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY

ISSN:1057-9257    

DOI:10.1002/amo.860010101

出版商:John Wiley&Sons Ltd.    

年代:1992

数据来源: WILEY