DOI:10.1049/ree.1973.0001

出版商:IERE    

年代:1973

数据来源: IET

摘要:

Under the above headline in theBell Laboratories Recordfor December 1972, John Bardeen, Walter Brattain and William Shockley, joint winners of the Nobel Prize in Physics in 1956, recall the events leading up to the invention of the transistor in 1948 and comment on its effects. Morgan Sparks, who built the first junction transistor and has subsequently directed semiconductor work at Bell Laboratories, also reflects on ‘25 years of transistors’, and quotations from contemporary papers by some of the other workers concerned with the more significant of subsequent developments go to make a fitting commemorative issue.

DOI:10.1049/ree.1973.0002

出版商:IERE    

年代:1973

数据来源: IET

摘要:

The development of the junction transistor from its earliest form of a plastics encapsulated, alloy transistor to the final silicon planar device is traced during the period from 1952 to 1962. At the same time some of the significant steps in the development of the understanding of the device are described.

DOI:10.1049/ree.1973.0003

出版商:IERE    

年代:1973

数据来源: IET

DOI:10.1049/ree.1973.0004

出版商:IERE    

年代:1973

数据来源: IET

摘要:

This paper illustrates the progress of semiconductor device development during the 1960s by reference to various families of active devices (excluding opto-devices).The reasons for the change during that period from germanium to silicon technology are discussed, and the enormous influence of the silicon planar technique on device design and manufacturing methods is shown. The increasing role of the silicon integrated circuit is described, and the reasons why the integrated circuit, both bipolar and m.o.s. will continue to form the basis of future equipment design are explained.

DOI:10.1049/ree.1973.0005

出版商:IERE    

年代:1973

数据来源: IET

摘要:

This paper describes the preparation of semiconductor single crystal material in bulk and thin films. Particular emphasis is placed on silicon and gallium arsenide, and the growth methods are described in relation to the electrical characteristics which are required for device fabrication.

DOI:10.1049/ree.1973.0006

出版商:IERE    

年代:1973

数据来源: IET

摘要:

The basic technologies which have been developed to satisfy the production of semiconductor devices are outlined.These technologies commenced with point-contact alloy and alloy-diffused techniques. Diffusion was then developed giving the means of making structures such as rectifiers, transistors and thyristors.Silicon planar technology and the assembly methods used are then described as applied to discrete devices and integrated circuits (both bipolar and m.o.s.).

DOI:10.1049/ree.1973.0007

出版商:IERE    

年代:1973

数据来源: IET

摘要:

The paper looks at the development of integrated circuits from its conception in 1952, through to the present multi-million dollar business. Major developments in both circuitry and process technology are highlighted and some indication is given of the direction in which the industry may move in the future.

DOI:10.1049/ree.1973.0008

出版商:IERE    

年代:1973

数据来源: IET

摘要:

The relationship between physical and electrical parameters is reviewed. Some of the newer technologies are discussed. The interdigitated structure is compared with the two main alternatives offered at present. At the same time a basic correction is made to the well established approximation of power gain as applied to power devices. The necessity for this correction is also developed with respect to modules, leading to the conclusion that thin film modules offer probably the only chance to utilize fully the intrinsic power gain capability of devices. As the useful limit of silicon appears now in sight, numeric examples are used wherever possible.

DOI:10.1049/ree.1973.0009

出版商:IERE    

年代:1973

数据来源: IET

摘要:

Because of the need for a large market and the initial problems with technically complex circuits, integrated circuits developed later for analogue than for digital systems. There are now two reasonably distinct groups of analogue circuits, namely those for professional use and those for incorporation in consumer equipment.In the former category characteristics and trends of professional circuits are considered with particular reference to operational amplifiers and other types of amplifier, voltage regulators, analogue multipliers and phase-locked loops. Consumer integrated circuits considered include audio amplifiers, radio receivers and allied devices, and circuits for colour television. In all cases there is a tendency for monolithic designs to diverge from established circuit practice in discrete technology, and this trend may be expected to continue.

DOI:10.1049/ree.1973.0010

出版商:IERE    

年代:1973

数据来源: IET