摘要:

The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.

DOI:10.1049/ij-ssed.1978.0019

出版商:IEE    

年代:1978

数据来源: IET

摘要:

M.I.S. solar cells of amorphous silicon on stainless steel, with a top barrier contact of Ni/TiOx, have given 4.8% power conversion efficiency without an antireflection coating. The insulating layer, with an optimum thickness of ≈ 2nm, compensates for the low work function of nickel compared with platinum, and enables similar high open-circuit voltages (up to 680 mV) to be obtained. The fill factor is not appreciably degraded by the addition of an insulating layer, unless this is thicker than = 3 nm. Under illumination, the diode characteristics change compared with their behaviour in the dark; the diode factor, the barrier height, and the series resistance are all dependent on light intensity.

DOI:10.1049/ij-ssed.1978.0027

出版商:IEE    

年代:1978

数据来源: IET

摘要:

The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.

DOI:10.1049/ij-ssed.1978.0025

出版商:IEE    

年代:1978

数据来源: IET

摘要:

Owing to the short lifetimes and low mobilities of carriers in amorphous silicon, diffusion is not the dominant mechanism responsible for determining the collection of photogenerated electrons and holes. It has been established that the photocurrent is determined by the photogeneration of carriers in the depletion region and their subsequent removal with the aid of the built-in field. This is confirmed here through an analysis of thep-i-ncell spectral response curve published by Carlson and Wronski. From the analysis, a value of 10-8cm2/Vis estimated for the product of lifetime and mobility for photogenerated holes, which is consistent with a short diffusion length. A calculation is presented of the current/voltage characteristic for a model Schottky-barrier solar cell under illumination. This gives a short-circuit current in agreement with the measured values, and demonstrates the reduced fill factor which can be expected from the voltage dependence of the photocurrent. This model predicts an a.m.l efficiency of about 8%.

DOI:10.1049/ij-ssed.1978.0015

出版商:IEE    

年代:1978

数据来源: IET

摘要:

An account is given of the likely applications for silicon solar cells in systems employing optical concentration. The preparation ofn+-p-p+cells from monocrystalline and polycrystalline wafers together with preliminary performance characteristics are reported. A novel type of concentrating solar collector is described.

DOI:10.1049/ij-ssed.1978.0023

出版商:IEE    

年代:1978

数据来源: IET

摘要:

The effect of different meteorological conditions on Schottky-barrier solar-cell outputs has been investigated, using a model for ann-type solar cell. Similar results to those forp-njunction cells have been obtained, namely that although the output power density is reduced, a much higher conversion efficiency is possible when the solar cell is illuminated with diffuse radiation. The effect of the density of interfacial states, and the metal work function, upon theJ/Vcharacteristics and on the conversion efficiency is shown to be an important feature of Schottky-barrier solar cells.

DOI:10.1049/ij-ssed.1978.0021

出版商:IEE    

年代:1978

数据来源: IET

摘要:

A survey of work on terrestrial solar photovoltaic installations using silicon solar cells is presented, and three main areas are discussed. First, the possible processing routes for cell manufacture are considered and conclusions arrived at for the lowest-cost route. Secondly, cell encapsulation is considered with reference to the environmental stresses that an encapsulated module must withstand. Thirdly, the computation of installation parameters for minimum cost is described, an installation being defined as a stationary array of modules in conjunction with a rechargable battery.

DOI:10.1049/ij-ssed.1978.0020

出版商:IEE    

年代:1978

数据来源: IET

摘要:

The present state of silicon Schottky-barrier solar cell (s.b.s.c.) development is reviewed and the relative advantages and disadvantages of this type of cell compared with the competing homojunction cell technology. Recent work on cast silicon substrates is considered, and the conclusion drawn that Schottky-barrier cells are not likely to compete unless a wholly thin-film s.b.s.c. can be developed based on the favourable absorption properties of amorphous silicon. A number of problems requiring solution before s.b.s.c. can compete in terms of reliability and low cost for both thick- and thin-film cells are discussed.

DOI:10.1049/ij-ssed.1978.0012

出版商:IEE    

年代:1978

数据来源: IET

摘要:

The paper reviews the major current US approaches to the cost reduction of solar cells, with the emphasis on silicon devices. Single-crystal, ribbon-grown and polycrystalline silicon solar cells are discussed.

DOI:10.1049/ij-ssed.1978.0018

出版商:IEE    

年代:1978

数据来源: IET

摘要:

It is shown that ionised-cluster beam deposition and epitaxial techniques are useful for the fabrication of photocells. A thin layer of single-crystal silicon and a very thin conductive metal film made by these techniques are used to obtain wide-spectrum sensitivity of the cells. Thep-njunction diode has been made byn-type silicon epitaxy onto ap-type silicon substrate. The Schottky-barrier diode has been made by depositing a gold film onto ann-type silicon substrate. These techniques have a high potential for making an ohmic-contact electrode with good adhesion. The alloy process can be eliminated from the fabrication of a photocell. Finally, the current status of solar-cell technology in Japan is reviewed.

DOI:10.1049/ij-ssed.1978.0017

出版商:IEE    

年代:1978

数据来源: IET