ISSN:1050-1827    

DOI:10.1002/mmce.4570020102

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractThe generalized circular structures imply combinations of concentric strip rings with various potentials. The rectangular boundary division method is extended to estimate the total electric field energy from which the capacitance is effectively calculated. Numerical results based on this method are compared with other available numerical results and experimental data.

ISSN:1050-1827    

DOI:10.1002/mmce.4570020103

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractA simple graphical statistical method is presented and is used to study the statistical sensitivity of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT) small‐signal performances to physical model parameters, Using an analytical model and applying numerical techniques, the small‐signal performances, transconductance, gate‐to‐source capacitance, current gain cut‐off frequency, and the optimum cut‐off frequency are calculated for four different HEMTs. These are then used as the device specifications in the Monte Carlo‐based sensitivity analysis.Based on the model, a device simulator is developed in which the gate length, the gate width, and the carrier mobility are statistically varied simultaneously about their nominal values. The yield factor histograms for each small‐signal parameter and its sensitivity to the process parameter variations are determined. In this work, we report that the current gain cut‐off frequency increases as the carrier mobility increases, but it is almost independent of the gate width. We observe that the gate‐to‐source capacitance is independent of the carrier mobility, but it is strongly dependent on the transistor dimension. All the performance yields analyzed here go down as the

ISSN:1050-1827    

DOI:10.1002/mmce.4570020104

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractA novel microwave active bandpass filter structure, using a combination of microstrip line resonators and FETs, is described. The resulting filter not only produces positive gain but also has good performance regarding sharpness of skirts, rejection, and input and output return losses. Capability of constructing wider bandwidth and its superior performance at harmonic band frequencies over an end‐coupled filter structure are among advantages of this desig

ISSN:1050-1827    

DOI:10.1002/mmce.4570020105

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractThis article presents the derivation of an analytical equation for the equivalent dielectric constant of a microstrip on an anisotropic substrate. Unlike previous methods, this approach does not require the evaluation of Green's function or finite element analysis. The equivalent dielectric constant, together with an empirically derived dispersion equation, predicts the phase velocity to within 1% of the rigorous full‐wave solution. The use of the model is demonstrated by the analysis of a rectangular pulse propagation along a 50‐Ω microstrip on a Sapphire subst

ISSN:1050-1827    

DOI:10.1002/mmce.4570020106

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractA finite elements‐based Method of Lines is used to calculate static capacitances for microstrip line structures with layered substrates of arbitrary permittivity tensor. The problem is solved by discretizing the associated static equations in one coordinate variable using finite elements, and obtaining an analytical solution with respect to the remaining variable. Proper boundary and transition conditions are imposed. To validate the solution, comparison is made with results derived from other methods. A significant increase in numerical efficiency afforded by the presented method, relative to the conventional, fully discrete, finite element solution, is demonstrated quantitativel

ISSN:1050-1827    

DOI:10.1002/mmce.4570020107

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

摘要:

AbstractA new method for the derivation of a FET‐equivalent circuit for large‐ and small‐signal applications is described. The model, which is valid at least up to 26.5 GHz, consists of 9 nonlinear intrinsic elements and 8 linear extrinsic elements. All circuit‐elements are determined from measured DC and scattering parameters without numerical optimization by an analytical method at any bias condition. The nonlinear elements are expressed by two‐dimensional spline functions of the third order. For nonlinear simulations, the harmonic‐balance technique, combined with a successive approximation method without function derivations is used. A modified harmonic‐balance technique is applied for nonlinear simulations o

ISSN:1050-1827    

DOI:10.1002/mmce.4570020108

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

ISSN:1050-1827    

DOI:10.1002/mmce.4570020109

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY

ISSN:1050-1827    

DOI:10.1002/mmce.4570020111

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1992

数据来源: WILEY