ISSN:1050-1827    

DOI:10.1002/mmce.4570030102

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

ISSN:1050-1827    

DOI:10.1002/mmce.4570030103

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractA new approach for physical one‐dimensional FET modeling is presented, which is based on an analytical velocity overshoot approximation. As an application, an improved description of short‐channel GaAs‐MESFETs is shown. This simulation is equivalent to the use of a saturation velocity, which depends not only on gate length but also on bias. The presented approach is based on a new criterion subdividing the channel, which may also be used in simulation of other types of FETs. A comparison of the proposed model with experimental data of the DC behavior and numerical results shows the necessity of taking surface effects and substrate currents into account. © 1993 John Wiley&Son

ISSN:1050-1827    

DOI:10.1002/mmce.4570030104

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractA friendly software called HELENA is presented here. Using this software, the DC, AC, and noise performance of any kind of HEMT can be calculated. Based on a physical quasi‐two‐dimensional approach, HELENA gives results in good agreement with experiments and is very well suited for the design of microwave ICs. © 1993 John Wiley&Sons,

ISSN:1050-1827    

DOI:10.1002/mmce.4570030105

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractThe simultaneous determination of noise, gain and scattering parameters through a computer‐driven noise figure measuring system allowed the rapid and accurate characterization of several samples of low noise HEMTs of the same family. From the measured parameters an equivalent circuit model representing the behavior of the typical device is extracted by means of a decomposition approach. Comparison between the model performance and the set of measured parameters of all devices are reported for the FHR 02FH (by Fujitsu). The modeling procedure is mainly oriented to the CAD of (M)MIC low noise wideband amplifiers. © 1993 John Wiley&Sons, I

ISSN:1050-1827    

DOI:10.1002/mmce.4570030106

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractMethods are discussed for forecasting, in a few seconds on a personal computer with a 486 processor, equivalent circuits and S‐parameters of a GaAs FET from a physical specification. By inverting the algorithms, similarly fast simulators can be devised to fit equivalent circuits to measured S‐parameters, in the process yielding information on the FET's material and structural dimensions. The practical value of such simulators is illustrated by FETs designed and implemented to have a noise figure and associated gain at 12 GHz comparable with commercial pseudomorphic HEMTs. © 1993 John Wiley&Sons,

ISSN:1050-1827    

DOI:10.1002/mmce.4570030107

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractA methodology will be presented for incorporating arbitrary, multiport, nonlinear devices into a three‐dimensional (3D) condensed node TLM mesh. Gear's second‐order predictor‐corrector algorithm with a variable step size is used to solve the differential equations of the device. Two examples are given to demonstrate the concepts and the versatility of the method. These include a waveguide cavity varactor‐tuned oscillator and a diode switch. © 1993 John Wiley&S

ISSN:1050-1827    

DOI:10.1002/mmce.4570030108

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractA formula for the resonance frequencies of circular microstrip patch antennas for 30 TMnmmodes is developed by the curve‐fitting technique from computed data of existing theory. The formula is found to be within about ± 1.3% error of the theoretical results. For this formula, it is not necessary to compute the zeros of the derivative of the Bessel function. The formula is expressed in a simple algebraic form to be appropriate for the computer‐aided design (CAD) of microstrip antennas. © 1993 John Wiley&Sons

ISSN:1050-1827    

DOI:10.1002/mmce.4570030109

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

摘要:

AbstractThis article points out the possibility of obtaining nonsymmetrical Z‐matrices when the contour integral method is used for analysis of a general‐shaped, two‐dimensional planar component even when the component is passive and reciprocal. The nonsymmetry is caused by dependence of the normal derivative of the Green's function on the geometry. This nonsymmetry may be reduced by increasing the number of sections on the contour or by selecting a Green's function such that its normal derivative on the contour is zero. © 1993 John Wiley&Son

ISSN:1050-1827    

DOI:10.1002/mmce.4570030110

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY

ISSN:1050-1827    

DOI:10.1002/mmce.4570030111

出版商:Wiley Subscription Services, Inc., A Wiley Company    

年代:1993

数据来源: WILEY