ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00239.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYEvidence from weak beam electron microscopy shows that dislocations introduced by deformation of crystals of tetrahedrally coordinated semi‐conductors are dissociated into partials, and suggests that these lie on the‘glide’ rather than the‘shuffle’ planes. Models of the structures of the cores of such partials are described, and it is proposed that the bonds in the cores of the 30° and 90° partials constituting screw and 60° dislocations are reconstructed, forming one dimensional super‐lattices, and that dangling bonds occur only at kinks, antiphase defects, and possibly in the cores of 60° partials constituting edge dislocations. The implications regarding electronic and optical properties are discussed briefly. Consideration of the charge carried by dislocations suggests that significant Coulomb forces between partials may arise only when Cottrell atmospheres of charged point defects or impurit

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00240.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYThe stacking fault energiesyof silicon (58 ± 6 mJ m−2) and germanium (75 ± 10 mJ m−2) were determined. Within the limits of accuracy γ was not found to change on doping with (13·8 mol m−3(8 × 1018cm−3) boron, and 1·17 mol m−3(7 × 1017cm−3) phosphorus). Freezing in dislocations under high shear stress reveals a different behaviour of screw dislocations: whereas these dislocations become wider in pure and p‐silicon, they become narrower in n‐silicon. From this we conclude the ratio of mobilities of the two 30° partials to be different in n‐ and p‐silicon. Other observations on frozen

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00241.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYThe properties of edge‐type dislocations are strongly dependent on the temperature at which they have been introduced into the crystal. Dislocations produced atT0·6Tminto germanium, can be interpreted in terms of a half‐filled one‐dimensional band (forT≥ 50 K), which might be due to dangling bonds in the dislocation core. In silicon the experimental data indicate a similar form of the local energy spec

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00242.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYBipolar transistors showing the‘emitter‐push effect’ have been investigated by transmission electron microscopy. From the analysis of isolated dislocation helices in the boron base and the phosphorus emitter it is concluded that the diffusion of phosphorus into silicon is coupled with a supersaturation of silicon self‐interstitials. A new generation mechanism for this supersaturation is su

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00243.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYThe transmission electron microscope (TEM) has been used to study the structure of Si implanted with low solubility dopants and annealed using pulsed radiation from a Q‐switched ruby laser. Annealing took place by transient surface melting and, for Fe+ ion and Cu+ ion implants, most of the impurity was zone refined out to the sample surface where silicide phases were formed. The occurrence of constitutional supercooling in the resolidifying melt led to a non‐uniform distribution of these silicides. Nevertheless, the Si matrix recrystallized in a highly perfect manner, as was also the case for annealed Ar+ ion implants. However, the latter also gave rise to the formation of bubbles which yielded information about the final buried Ar distribution. Silicon layers implanted with very high doses of nitrogen also apparently retained some of the impurity after annealing, although studies of the physical state of this nitrogen are still in progr

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00244.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYIn the present investigation, three separate projects are described. First, P+ implanted Si is laser and furnace annealed, and the resulting structures as observed by TEM are compared. Second, similar studies are made of Zn+ implanted GaAs, the laser annealing being performed either with or without a surface encapsulating layer. Third, As+ implanted Si is laser annealed, and the uniformity of the annealing process as determined by SEM EBIC studies is assessed. The results have shown that different damage structures can be produced by laser annealing compared to furnace annealing, and by different laser energy densities. For the laser annealed specimens, the TEM observations provided evidence for the formation of a molten surface layer. The results demonstrated for GaAs that encapsulation was still required for laser annealing, and for Si that laser annealing can give a varying p‐n junction depth within individual slices. The latter is explained by a molten surface layer extending to different depths during the annealing process, this being attributed to spatial variations in laser intensity across the area illuminate

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00245.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYA method of annealing ion implanted silicon with a scanned electron beam is described. Annealing can be achieved without visible damage to silicon or silicon oxide in resistor structures. At excessively high powers, uncontrolled melting can be seen. The structure of the implanted surface layer is shown with SED to change from amorphous to single crystal after annealing.

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00246.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYMonocrystalline {111} Si and Ge specimens have been irradiated with atomic and molecular heavy ions in order to study the influence of the cascade energy density and the interaction between displacement cascades on the defect production. Transmission electron microscope (TEM) studies were performed to investigate the defect parameters. After atomic irradiation of Si and Ge the defects analysed (typical size 3–5 nm) are of interstitial type. Both defects with three‐dimensional strain centres and defects with a strongly asymmetric strain field were observed. An analysis of the yield and the defect size in Si as a function of ion dose suggests that the defects are formed within individual cascades rather than by a process involving overlapping cascades. Changes of the energy density locally deposited in the lattice do not affect yield and size significantly. Under otherwise similar experimental conditions, the average defect depth is significantly larger for Bi2+ irradiations than for Bi+ irradiati

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00247.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY

摘要:

SUMMARYAt elevated temperatures, electron irradiation damage in silicon and germanium forms faulted defects on {113} which are elongated in. During the present work on silicon, these {113} faults were observed to unfault, apparently by glide, to give elongated interstitial loops withb=a/2. Since the tetrahedral interstitial sites between adjacent {113}s form a full {113}, in both number and distribution, it was concluded that the atoms were accommodated in these positions.A fault of this type comprises interstitial pairs, the atoms of which are on adjacent tetrahedral sitesa/4apart, and it is proposed that these already exist, or are formed, when a fault nucleates. Two‘di‐interstitials’ then close‐pack along one of the threes normal to theiraxis, thus nucleating a {112} loop. This is unable to grow in any direction other than, because its habit plane is occupied by matrix atoms, so the loops become extended. The defect grows in width by nucleating further loops on {112} planes, extended parallel to the first, and the‘array’ forms an elongated {113} defect, on a plane 10° from the original {112}. This gives the observed faulted {113} loops, elongated in, wi

ISSN:0022-2720    

DOI:10.1111/j.1365-2818.1980.tb00248.x

出版商:Blackwell Publishing Ltd    

年代:1980

数据来源: WILEY