摘要:

An experimental and theoretical investigation of the more important parameters which affect the developed profile shape in electron-beam lithography is described. The theoretical approach is based on a Monte Carlo method of simulating electron scattering in the substrate to calculate the energy dissipation in the electron resist layer for a scanned electron beam. The current distribution in the beam is taken into account with a separate convolution procedure. The developed profile shape is obtained with a threshold solubility model which predicts a threshold energy density of 6.58 × 1021eV/cm3. A development simulation using the string method is used to predict the profile shape when the development process becomes a significant factor at a resist thickness of about 0.7μm. Finally the proximity effect is investigated by means of adjacent line experiments and compared with the predictions of the threshold solubility model.

DOI:10.1049/ip-i-1.1981.0001

出版商:IEE    

年代:1981

数据来源: IET

摘要:

The first self-consistent description of the above-threshold behaviour of the CSP laser is presented. The analysis incorporates the relationship between the optical field and the lateral variation of the electron concentration in the active region. The influence of current spreading on the gain profile is included in the formalism. Operating characteristics of the device such as near and far-field patterns and light/current curves are found. Devices of differing cross-sectional dimensions are examined.

DOI:10.1049/ip-i-1.1981.0003

出版商:IEE    

年代:1981

数据来源: IET

摘要:

The paper is a review of tungsten-base dispenser cathodes. Particular emphasis is placed on the many factors that contribute to the performance of a dispenser cathode. The review includes a history of the evolution of the modern dispenser cathode, fabrication techniques and their influence on cathode performance, state-of-the-art performance characteristics for various types of dispenser cathodes and possible future developments for dispenser cathodes.

DOI:10.1049/ip-i-1.1981.0012

出版商:IEE    

年代:1981

数据来源: IET

摘要:

The problems of measuring thefTof upward-operating planar transistors are discussed. It is shown that accurate values offβmay be determined by measuring the forward and reverse voltage transfer ratio of the transistor when connected in common-collector configuration. A simple, low-cost experimental system is described which gives excellent results over a wide range of collector currents (1 μA to 10μA). Results are presented for a discrete n-p-n transistor, but the method is also ideally suited to measurements onI2Ltransistors.

DOI:10.1049/ip-i-1.1981.0016

出版商:IEE    

年代:1981

数据来源: IET