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1. |
Millimeter‐wave signal generation using semiconductor diode lasers (invited paper) |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 1-5
R. J. Helkey,
D. J. Derickson,
A. Mar,
J. G. Wasserbauer,
J. E. Bowers,
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摘要:
AbstractMethods of millimeter‐wave signal generation are presented using frequency multiplication by optical comb generation, direct generation using optical oscillators, and mixing between CW optical sources. © 1993 John Wiley&sons, I
ISSN:0895-2477
DOI:10.1002/mop.4650060103
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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2. |
High‐speed quantum‐well interferometric modulators for InP‐based photonic integrated circuits (invited paper) |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 6-14
J. E. Zucker,
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PDF (989KB)
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摘要:
AbstractWe discuss high‐speed waveguide modulators for optical fiber communications that employ semiconductor quantum wells, with emphasis on electrorefractive devices. The prime advantages of quantum‐well material in this application are provided by enhanced electro‐optic effects that allow ultracompact devices with low drive voltage requirements. The small size is particularly important for low‐cost monolithic integration with other components for guided‐wave photonic integrated circuits. In our devices, compactness is also key for obtaining high electrical modulation bandwidth. © 1993 John Wiley
ISSN:0895-2477
DOI:10.1002/mop.4650060104
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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3. |
A novel architecture of a balanced fiber‐optic communication link for laser rin reduction |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 15-18
Asher Madjar,
Oded Malz,
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PDF (380KB)
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摘要:
AbstractThis article presents a novel architecture of a balanced optical communication link intended to reduce the effect of the transmitter laser RIN on the total noise figure and dynamic range of the link. The degree of noise reduction depends on the balancing of amplitude and phase in the two arms of the link and on the modulation frequency relative to the laser relaxation oscillation frequency. © 1993 John Wiley&sons, Inc
ISSN:0895-2477
DOI:10.1002/mop.4650060105
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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4. |
An analysis of the frequency limitations of an AlxGA1‐xAs/GaAs optical modulator |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 18-22
M. Tabib‐Azar,
P. C. Claspy,
C. Chorey,
K. B. Bhasin,
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PDF (534KB)
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摘要:
AbstractFrequency response of an optical modulator, operating at λ = 0.83 μm and utilizing the linear electro‐optic (Pockels) effect in a Mach‐Zehnder configuration using an AlxGa1‐xAs/AlyGa1‐yAs double heterostructure, is analyzed. We show that in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. © 1993 John Wiley
ISSN:0895-2477
DOI:10.1002/mop.4650060106
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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5. |
Light interaction with GaAs mesfet and its applications— a review (invited paper) |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 22-27
A. Madjar,
A. Paollela,
P. R. Herczfeld,
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摘要:
AbstractThe GaAs MESFET is a light‐sensitive device. For normal microwave applications this is considered an undesirable property, and device manufacturers attempt to minimize it. In the last decade researchers discovered ways of utilizing this effect. In this article we present briefly the optical detection properties of the MESFET and describe some typical applications. © 1993 John Wiley&sons, I
ISSN:0895-2477
DOI:10.1002/mop.4650060107
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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6. |
Intermixing optical and microwave signals in GaAs microstrip circuits and its applications |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 27-32
M. G. Li,
Chi H. Lee,
Hing‐Loi A. Hung,
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PDF (633KB)
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摘要:
AbstractA novel intermixing technique which combines microwaves with ultrafast optics in GaAs MMIC is presented. This technique has many features and applications. On‐wafer phase locking of a free running microwave source to the optical pulses, displaying a high‐frequency waveform by a low‐frequency replica using sequential optical sampling and high‐sensitivity field, mapping of a GaAs microstrip circuit, is demonstrated. The electro‐optical and photoconductive mixers are compared. © 1993 John Wiley
ISSN:0895-2477
DOI:10.1002/mop.4650060108
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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7. |
Fabrication and performance of high‐power optically activated GaAs opening switch |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 32-33
S. G. Liu,
S. N. Subbarao,
A. Rosen,
David Sarnoff,
C. H. Lee,
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摘要:
AbstractCubic‐ and wafer‐shaped GaAs p‐i‐n diodes fabricated with ion‐implanted p/n contact layers have been operated as optically activated opening switches with high‐power output performances. © 1993 John Wil
ISSN:0895-2477
DOI:10.1002/mop.4650060109
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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8. |
Direct optical subharmonically injection‐locked mesfet oscillators |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 33-36
Thomas P. Higgins,
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摘要:
AbstractReported here are the results of direct optical subharmonically injection‐locked oscillators at 5.455 and 15.011 GHz. Multiplication of subharmonics was achieved mainly by overmodulation of a laser diode. Significant locking ranges were attained, and subharmonic factors of up to 1/15 were used. © 1993 John Wiley&sons, I
ISSN:0895-2477
DOI:10.1002/mop.4650060110
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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9. |
Optical control of pseudomorphic HEMT‐based MMIC oscillators |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 36-38
A. Bangert,
J. Rosenzweig,
A. Hülsmann,
G. Kaufel,
K. Köhler,
J. Schneider,
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摘要:
AbstractExperimental results on direct and indirect optically controlled monolithically integrated oscillators will be presented. The oscillators had a free‐running frequency around 7 GHz. The experimental results show that the indirect optically controlled circuits seem to be more effective in controlling the phase of the output signal. © 1993 John Wiley&sons, I
ISSN:0895-2477
DOI:10.1002/mop.4650060111
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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10. |
The effect of optical intensity on the photoresponse of the GaAs mesfet |
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Microwave and Optical Technology Letters,
Volume 6,
Issue 1,
1993,
Page 38-42
Arthur Paolella,
Peter R. Herczfeld,
Asher Madjar,
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PDF (619KB)
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摘要:
AbstractThis article is concerned with the effect optical intensity has on the frequency response, gain, and bandwidth of the GaAs MESFET when used as an optical detector. Measurements show that the photoresponse gain can be increased by 10 dB as the optical intensity is lowered, while the bandwidth of the MESFET can be increased by an order of magnitude with an increase in optical power. © 1993 John Wiley&sons, Inc
ISSN:0895-2477
DOI:10.1002/mop.4650060112
出版商:Wiley Subscription Services, Inc., A Wiley Company
年代:1993
数据来源: WILEY
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