Evaporated Sn layers on Si and sapphire substrates were used to demonstrate the applicability of the backscattering technique to measurement of the fraction of covered area, the average thickness of the layer, and the sticking factor for temperatures over the range 77–400 °K. The sticking factor at 293°K was found to be ⅓ of that at 77 and 393 °K, and 19% higher at room temperature (r.t.) for Sn on Sn as compared with Sn on Si. At 393 °K the fraction of covered area was found to be about 60% and the average island thickness was in the range 450–1000 Å.