SHALLOW LEVEL TRAPPING AND DETRAPPING IN Si(Li) DETECTORS AT LOW TEMPERATURES
作者:
M. Martini,
T. A. McMath,
期刊:
Applied Physics Letters
(AIP Available online 1969)
卷期:
Volume 14,
issue 12
页码: 374-376
ISSN:0003-6951
年代: 1969
DOI:10.1063/1.1652693
出版商: AIP
数据来源: AIP
摘要:
Trapping‐detrapping pulse shapes have been observed in two Si(Li) detectors in the temperature range 8.5–70°K. A semiquantitative treatment leads to the conclusion that shallow trapping levels are responsible for the observed phenomena. It appears likely that these levels correspond to the donor (Li) and acceptor (B) dopants; if this hypothesis is confirmed by further experimental work it establishes a low‐temperature limit on the use of semiconductor detectors for &ggr;‐ray and high‐energy particle spectroscopy.
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