Indium phosphide implanted with Se+has been laser annealed with 70 ps pulses at both &lgr;=0.53 and 1.06 &mgr;m. For doses of 1×1015cm−2, activations of ∼70% with peak electron concentrations of 6×1019cm−3have been achieved, while for doses of 3×1015cm−2, activations of 33% with peak electron concentrations of 1.2×1020cm−3were measured. The carrier depth profiles for the laser annealed samples are shallow while those for thermal annealing are broad compared to the as‐implanted profiles. The morphology of the laser annealed spots is briefly discussed.