Stress compensation in laser diodes
作者:
H. Koyama,
T. Nishioka,
K. Isshiki,
H. Namizaki,
S. Kawazu,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 8
页码: 733-735
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94477
出版商: AIP
数据来源: AIP
摘要:
Stress compensation in GaAs‐(Ga,Al)As laser diodes is discussed. The stress distributions in the laser diodes are theoretically simulated by the finite element method. The photoelastic effect is used to observe the actual strain fields. It is found by simulation that the stress can be minimized by optimizing the Si submount thickness. Lasers fabricated with the optimized submount successfully exhibit low strain fields.
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