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The technology of semiconductor materials preparation

 

作者: J.C.Brice,   B.A.Joyce,  

 

期刊: Radio and Electronic Engineer  （IET Available online 1973）
卷期: Volume 43, issue 1-2  

页码: 21-28

 

年代: 1973

 

DOI:10.1049/ree.1973.0006

 

出版商: IERE

 

数据来源: IET

 

摘要:

This paper describes the preparation of semiconductor single crystal material in bulk and thin films. Particular emphasis is placed on silicon and gallium arsenide, and the growth methods are described in relation to the electrical characteristics which are required for device fabrication.

 

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