The electrical properties of P and B implanted and cw CO2laser annealedn‐ andp‐type Hg1−xCdxTe (x=0.21, 0.29) are studied. Hall, conductivity, and capacitance‐voltage (C‐V) measurements carried out on the virgin, implanted, and annealed samples all show that both donor and acceptor implants can be electrically activated when annealing with a cw CO2laser (0.3 s, 250 W/cm2) is employed.