首页   按字顺浏览 期刊浏览 卷期浏览 Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 &mgr;m
Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 &mgr;m

 

作者: A.F. Gibson,   C.A. Rosito,   C.A. Raffo,   M.F. Kimmitt,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 21, issue 8  

页码: 356-357

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654410

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The absorption ofp‐type Ge, Si, and GaAs at 10.6 &mgr;m decreases at high intensities. The saturation intensity of Ge, 10 MW cm−2, is sufficiently low for it to be used for passive mode locking of a TEA laser.

 

点击下载:  PDF (156KB)



返 回