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TEM observation of dislocation loops correlated with individual swirl defects in as‐grown silicon

 

作者: L. I. Bernewitz,   B. O. Kolbesen,   K. R. Mayer,   G. E. Schuh,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 5  

页码: 277-279

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655471

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Swirl defects in as‐grown silicon single crystals could be observed directly in a transmission electron microscope after application of a special sample preparation method. Complicated dislocation loops were found at positions of individual swirl defects which had been revealed as hillocks rather than as etch pits by a modified Sirtl etch.

 

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