Strain‐induced degradation of GaAs injection lasers
作者:
R. L. Hartman,
A. R. Hartman,
期刊:
Applied Physics Letters
(AIP Available online 1973)
卷期:
Volume 23,
issue 3
页码: 147-149
ISSN:0003-6951
年代: 1973
DOI:10.1063/1.1654838
出版商: AIP
数据来源: AIP
摘要:
This letter shows that strain is a controlling factor in the rapid degradation of GaAs double‐heterostructure junction lasers. A birefringence study of these lasers reveals extensive strain fields introduced during the bonding procedure resulting from the different thermal‐expansion coefficients of the materials involved. A new bonding procedure was developed which does not introduce significant strains. Lasers fabricated with the old and new bonding procedures were subjectively categorized as low, moderate, or high strained. A direct correlation was measured between low‐strain and room‐temperature cw laser lifetime. Lasers fabricated with the new bonding procedure have operated cw for as long as 880 h.
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