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ELECTRON BEAM DETECTION OF CHARGE STORAGE IN MOS CAPACITORS

 

作者: E. E. Huber,   M. S. Cohen,   D. O. Smith,  

 

期刊: Applied Physics Letters  （AIP Available online 1970）
卷期: Volume 16, issue 4  

页码: 147-149

 

ISSN:0003-6951

 

年代: 1970

 

DOI:10.1063/1.1653137

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A method for destructive detection of the state of charge storage in a metal‐SiO2‐Si capacitor is presented. This method is based on the modulation by the charge of the efficiency of separation of electron‐hole pairs which are generated by the penetration of an electron beam into the capacitor.

 

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