Thin amorphous films of the superconducting metallic glass (Mo0.6Ru0.4)82B18were annealed for 1 h at various temperaturesTAup to 650 °C. The structural relaxation caused by the isochronal annealing well below the crystallization temperature leads to a decrease of the critical temperatureTcand to an increase of the electrical resistivity &rgr;. Subsequently the films were irradiated with high energetic sulphur ions below 30 K. It is shown that the structural effects induced by the heat treatment are opposite to the irradiation effects and can be reversed by the ion irradiation. After high dose irradiation the saturation values of &rgr; andTcindicate that the structural states of the amorphous films are identical for all samples independently of the initial stage of relaxation. The experimental results confirm our former interpretation of the irradiation effects in this compound as a smearing of the structure factorS(k).