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Efficient LPE‐grown InxGa1 −xAs LEDs at 1–1.1‐&mgr;m wavelengths

 

作者: R. E. Nahory,   M. A. Pollack,   J. C. DeWinter,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 3  

页码: 146-148

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655416

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the growth and fabrication of LPE multilayer InxGa1 −xAs homojunction LEDs. Junction edge emission in the 1.0–1.1‐&mgr;m wavelength range was obtained with external efficiencies of ∼1%. An important feature of the device structure is the incorporation of simple stepwise compositional grading for lattice matching of the substrate andp‐njunction layers.

 

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