Multidimensional quantum well laser and temperature dependence of its threshold current
作者:
Y. Arakawa,
H. Sakaki,
期刊:
Applied Physics Letters
(AIP Available online 1982)
卷期:
Volume 40,
issue 11
页码: 939-941
ISSN:0003-6951
年代: 1982
DOI:10.1063/1.92959
出版商: AIP
数据来源: AIP
摘要:
A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase ofT0value from 144 to 313 °C.
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