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Backscattering study on lateral spread of implanted ions

 

作者: Seijiro Furukawa,   Hideki Matsumura,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 22, issue 3  

页码: 97-98

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654577

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Without ambiguities due to the cutting angle of a mask edge and the annealing process, the lateral spread of implanted Kr ions into Si substrates has been directly measured by the He+backscattering technique. The experimental results show good agreement with theoretical predictions.

 

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