The merits of two electron-beam systems are discussed, one for mask generation and the other for wafer alignment and exposure. The performance characteristics of both systems are described, including problems involved withICfabrication. Results of resolution, distortion, and alignment studies are given on both systems. The single-beam mask generator employs a field-emission source, and the performance advantages and disadvantages of this source for microfabrication are detailed. The field-emission source is imaged by an electrostatic lens at a 10-cm working distance. The characteristics of the focusing and deflection system are given. Parameters such as writing speed, beam current, resolution, and area of coverage are compared to conventional electron sources and performance results are reported. The performance of both cold and thermal field-emitters is also discussed. The electron projection system which utilizes a noble-metal patterned photocathode electron source is described. Electron-optical characteristics of the projection system are discussed, including results of alignment and distortion tests. The research model as well as the fully automated electron-projection system designed to process up to 100 wafers per hour are described.