Electrical and Optical Properties of rf‐Sputtered GaN and InN
作者:
H. J. Hovel,
J. J. Cuomo,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 20,
issue 2
页码: 71-73
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654051
出版商: AIP
数据来源: AIP
摘要:
GaN and InN thin films were grown on sapphire, silicon, and metallic substrates using rf sputtering at temperatures of 25–750°C and presputtering vacuum of 10−8Torr. The GaN films were high in resistivity (> 108&OHgr; cm), but the InN layers were highly conducting with an electron concentration of 7×1018cm−3. The refractive index for GaN ranged from 2.1 to 2.4 at long wavelengths and was dispersive below 8000 Å; the index for InN is higher, 2.9. The absorption coefficient was measured from wavelengths of 2 &mgr; to 2000 Å.
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