Undoped‐polycrystalline GaAs layers were deposited on Mo layers by metalorganic chemical vapor deposition and annealed by pulse laser irradiation. The laser used here was aQ‐switched ruby laser and the annealing was done by immersing the samples in SnCl2‐dissolved methanol. Then, recrystallization and doping of the GaAs layers were successfully done. The Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath; the barrier height was 0.53 eV.