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Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency

 

作者: T. Daud,   K. M. Koliwad,   F. G. Allen,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 12  

页码: 1009-1011

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90250

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The spatial variation of minority‐carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar‐cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.

 

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