Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency
作者:
T. Daud,
K. M. Koliwad,
F. G. Allen,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 12
页码: 1009-1011
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90250
出版商: AIP
数据来源: AIP
摘要:
The spatial variation of minority‐carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar‐cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.
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