Thermally stimulated current measurements and their correlation with efficiency and degradation in GAP LED'S
作者:
E. Fabre,
R. N. Bhargava,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 24,
issue 7
页码: 322-324
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655201
出版商: AIP
数据来源: AIP
摘要:
Thermally stimulated current (TSC) measurements have been performed onp‐njunctions in GaP grown by double liquid phase epitaxy. Several deep states have been observed in both thenandpsides of the junction, and a correlation has been established between the presence and concentration of some of these traps and the quantum efficiency of the corresponding light‐emitting diode (LED). It has also been observed that the degradation of the LED by heating under forward bias leads to the appearance or increase of the intensity of some peaks in the TSC spectrum.
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