首页   按字顺浏览 期刊浏览 卷期浏览 Gain Saturation in High‐Resistivity Si:B Photoconductors
Gain Saturation in High‐Resistivity Si:B Photoconductors

 

作者: M. M. Blouke,   R. L. Williams,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 1  

页码: 25-27

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1653964

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Detailed observation of the photoconductive gain saturation in high‐resistivity Si:B samples is reported. The calculated saturated gain of 0.52 agrees well with the theoretical prediction ofGsat= ½. These measurements strongly suggest that this phenomenon is a general characteristic of all high‐impedance extrinsic photoconductors.

 

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