We report the formation of Ohmic contacts to high‐dose (∼1016cm−2) Te‐implantedn‐type GaAs annealed with aQ‐switched Nd : YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistancerc≃2×10−5&OHgr; cm2were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 A˚ of GaAs, thereby exposing a surface of high Te concentration.