The preparation of (Al2O3)x(SiO2)ythin films using [al(OSiEt3)3]2as a single‐source precursor
作者:
Christopher C. Landry,
Linda K. Cheatham,
Andrew N. Macinnes,
Andrew R. Barron,
期刊:
Advanced Materials for Optics and Electronics
(WILEY Available online 1992)
卷期:
Volume 1,
issue 1
页码: 3-15
ISSN:1057-9257
年代: 1992
DOI:10.1002/amo.860010103
出版商: John Wiley&Sons Ltd.
关键词: Alumina;Silica;Aluminosilicate;Metal–organic chemical vapour deposition;Thin film
数据来源: WILEY
摘要:
AbstractAmorphous (Al2O3)x(SiO2)ythin films have been grown by atmospheric pressure metal‐organic chemical vapour deposition using the single‐source precursor [Al(OSiEt3)3]2. Characterisation by X‐ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3as the carrier gas resulted in the increased volatility of the precursor by thein situformation of the low‐melting Lewis acid–base adduct Al(OSiEt3)3(NH3); however, no nitrogen incorporation was observed in these deposi
点击下载:
PDF
(1977KB)
返 回