Characterisation of ion-implanted layers for GAAS FETs
作者:
M.Bujatti,
F.Marcelja,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 3
页码: 97-100
年代: 1981
DOI:10.1049/ip-i-1.1981.0028
出版商: IEE
数据来源: IET
摘要:
The problem of measuring very steep doping profiles, of the type usually present in ion-implanted GaAs FETs, is critically examined in the light of numerical solutions of the Poisson equation for some typical layers. It is found that the most popular techniques (C/V and saturation-current measurements) may be quite misleading or, at least, appreciable corrections are typically required.
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