Silicon carbide was chemically vapor deposited on the small particles in the fluidized bed reactor. Methyltrichlorosilane and hydrogen were used as reactants and in some cases argon was added as a fluidizing gas. Thirty-one coating runs were carried out where coating temperature, methyltrichlorosilane concentration and fluidizing gas composition were varied systematically. The deposit composition was found to be beta-SiC or mixture of beta-SiC and silicon by X-ray diffractometry. The coating temperature affected the deposit composition. From the results of the coating experiment, the model of the CVD processes was presented, which was based on the mass transfer mechanism. This model explained the experimental results fairly well.