High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range ofx. Electrical and optical properties of the layers were measured. Electrical compensation by Be+and N+implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.