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Charge‐coupled memory device

 

作者: Y.T. Chan,   B.T. French,   R.A. Gudmundsen,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 22, issue 12  

页码: 650-652

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654541

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Charge‐coupled devices with silicon‐nitride‐silicon‐oxide composite gate dielectric layers have been shown to exhibit electrically alterable static memory. The storage of charge und under a specific gate by combined charge transfer and tunneling into memory states and the detection of its presence at a later time have been demonstrated.

 

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