首页   按字顺浏览 期刊浏览 卷期浏览 Ohmic contacts onn+‐ andp+‐Si by ion implantation
Ohmic contacts onn+‐ andp+‐Si by ion implantation

 

作者: A. Feuerstein,   S. Kalbitzer,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 22, issue 1  

页码: 19-20

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654456

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thin layers ofn+‐ andp+‐Si have been metallized by implantation of ion doses of 1017Al/cm2at energies of 8 keV. Ohmic characteristics have been obtained after moderate annealing treatments.

 

点击下载:  PDF (113KB)



返 回