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Elimination of surface current induced failure in millimetre wave Baritt diodes

 

作者: J.Freyer,   U.Guettich,   M.Claassen,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  （IET Available online 1986）
卷期: Volume 133, issue 1  

页码: 25-27

 

年代: 1986

 

DOI:10.1049/ip-i-1.1986.0005

 

出版商: IEE

 

数据来源: IET

 

摘要:

The influence of surface charges on the current/voltage characteristics of Baritt diodes is described and an improved Baritt diode geometry avoiding surface currents is suggested which leads to sharpI/Vbehaviour and hence to stable oscillation conditions.

 

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