A gatedp‐njunction diode has been used to study the effects of neutron damage on the various lifetime parameters in silicon. Isochronal annealing of heavily irradiated devices leads to the observation of two annealing stages: one in the 150–250°C range corresponding to the previously reported divacancy anneal, and the other in the 300–400°C range corresponding to the anneal of oxygen associated defects. The diffusion current, the space‐charge generation current, and the space‐charge recombination current show similar annealing behavior, suggesting that the damage complexes in the space‐charge region are essentially of the same nature as those in the neutral bulk region.