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Stopping powers of 2–10 MeV Si, P and S ions in Ni, Cu and Ge thin films using a novel ERD-based technique

 

作者: M. Nigam,   J. L. Duggan,   M. El Bouanani,   C. Yang,   S. A. Datar,   S. Matteson,   F. D. McDaniel,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1901）
卷期: Volume 576, issue 1  

页码: 25-28

 

ISSN:0094-243X

 

年代: 1901

 

DOI:10.1063/1.1395240

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The stopping powers of 2–10 MeV Si, P and S ions in Ni, Cu and Ge thin films has been measured using a novel technique based on elastic recoil detection (ERD). This technique eliminates the need to recalibrate the silicon surface barrier detector while changing the incident ion species. Results have been compared to SRIM 2000 and other theoretical predictions and experimental measurements. ©2001 American Institute of Physics.

 

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